Abstract: A system is provided to prepare deionized water having a 100% saturated concentration of a gas, e.g., nitrogen, at a hot temperature, e.g., 50-85° C., and an attendant pressure, e.g., atmospheric pressure, to clean a semiconductor wafer, e.g., of silicon. The gas concentration of a first deionized water portion having a predetermined concentration of the gas at a cold temperature, e.g., 20-30° C., is adjusted in a gassifier chamber having a pressure pump and a pressure sensor, to provide a predetermined under-saturated concentration of the gas at the cold temperature. The temperature of the adjusted gas concentration first water portion is then adjusted by mixing therewith a second deionized water portion having a predetermined concentration of the gas at a predetermined very hot temperature, e.g., 80° C., in a predetermined ratio in a mixer having a temperature sensor.

Abstract: A trench capacitor with an epitaxial layer in the lower portion of the trench. The epitaxial layer may be doped to serve as a buried plate.

Abstract: A method for forming a semiconductor integrated circuit having a fuse and an active device. A dielectric layer is formed over the fuse and over a contract region of the active device. Via holes are formed through selected regions of the dielectric layer exposing underlying portions of the fuse and underlying portions of a contact region of the active device. An electrically conductive material is deposited over the dielectric layer and through the via holes onto exposed portions of the fuse and the contact region. Portions of the electrically conductive material deposited onto the fuse are selectively removed while leaving portions of the electrically conductive material deposited onto the contact region of the active device. A fill material is disposed in the one of the fuse, a bottom portion of such filling material being spaced from the fuse.