Abstract: In the liquid encapsulated Kyropoulos process, the crystal is allowed to grow to the limits of the crucible and remain under the encapsulant fluid. In order to relieve the melt pressure between the growing crystal and the crucible, at least one capillary pressure relief hole is placed in the crucible which allows some of the melt to leak therefrom to relieve pressure.
Type:
Grant
Filed:
June 29, 1990
Date of Patent:
October 12, 1993
Assignee:
The United States of America as represented by the Secretary of the Air Force
Inventors:
Steven Bachowski, Brian S. Ahern, Robert M. Hilton, Joseph A. Adamski