Abstract: A semiconductor structure having a trench formed therein is provided. The semiconductor structure may be a substrate with an overlying interlevel metal dielectric layer having the trench. A voltage is applied to the trenched semiconductor inducing a bias field where there is a first field proximate the trench bottom and a second field, greater than the first field, proximate the trench's upper side walls and the semiconductor upper surface proximate the trench. The semiconductor structure is placed into an electroplating solution containing a predetermined concentration of brighteners and levelers. Because of the induced bias field, the brightener concentration is greater proximate the trench bottom and the leveler concentration is greater the trench's upper side walls and the semiconductor upper surface proximate the trench.