Abstract: A method for forming a dual stripe magnetoresistive (DSMR) sensor element. The method employs a lift off stencil an etch mask for sequentially anisotropically etching a blanket second magnetoresistive (MR) layer, a blanket inter stripe dielectric layer and a blanket first magnetoresistive (MR) layer to form a patterned second magnetoresistive (MR) layer, a patterned inter stripe dielectric layer and a patterned first magnetoresistive (MR) layer with fully aligned edges. The lift off stencil is then employed as a lift off mask in forming a patterned dielectric layer covering the fully aligned edges. In a second embodiment a window within a lift off stencil is employed as an etch mask in forming aligned edges of a trimmed patterned first magnetoresistive (MR) layer and a trimmed patterned second magnetoresistive (MR) layer within the composite track width of a patterned first magnetoresistive (MR) layer and a patterned second magnetoresistive (MR) layer which are offset.