Abstract: A frame layout and method for determining the overlay accuracy of a first chip image relative to a second chip image when the first and second chip images are used to form a single chip. One embodiment employs a vernier scale in two orthoginal directions included in the scribeline of both the first chip image and the second chip image. Another embodiment employs a box in box pattern included in the scribeline of both the first chip image and the second chip image. A layer of photoresist on an integrated circuit wafer is exposed with the first and second chip image and the associated monitor images. When the photoresist is developed the overlay accuracy of the first chip image relative to the second chip image can be determined directly from the monitor images in the photoresist.
Type:
Grant
Filed:
April 1, 1999
Date of Patent:
December 11, 2001
Assignee:
Taiwan Semiconductor Manufacturing Company
Abstract: A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.
Type:
Grant
Filed:
April 8, 1999
Date of Patent:
June 26, 2001
Assignee:
WaferTech, L.L.C.
Inventors:
Jesse C. Shan, Chang-Kuei Huang, Steve H. Y. Yang