Patents Represented by Attorney, Agent or Law Firm Stephen B. Ackermana
  • Patent number: 6291306
    Abstract: A method of forming a high polysilicon resistor over a dielectric layer, comprising the following steps. A polysilicon resistor over a semiconductor structure is provided. The polysilicon resistor has a doped polysilicon layer having a first voltage coefficient of resistance and grain boundaries having a first trapping density. A to a first level of DC current is provided for a predetermined duration through the doped polysilicon layer to stress the doped polysilicon layer to partially melt the doped polysilicon layer without causing breakdown of the doped polysilicon layer. The to a first level of DC current is removed to allow recrystallization of the melted doped polysilicon layer, whereby the recrystallized doped polysilicon layer has a second voltage coefficient of resistance less than the first voltage coefficient of resistance and grain boundaries having a second trapping density that is less than the first trapping density. This makes the Rs of the polysilicon to be stable and saturated.
    Type: Grant
    Filed: July 19, 1999
    Date of Patent: September 18, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yung-Lung Hsu, Shun-Liang Hsu, Yean-Kuen Fang, Mao-Hsiung Kuo