Abstract: An instruction execution accelerator for a pipelined digital machine with virtual memory. The digital machine includes a pipelined processor which on memory accesses outputs a virtual address to a data cache unit (DCU). On particular memory accesses, such as store or similar operations, the pipelined processor can be advanced or accelerated to the next instruction once the memory access is known not to cause a page fault. The pipeline accelerator includes a small associative memory which the page number of a target address of a store operation is compared. If there is a match, it is know that the target address relates to a page within the real memory and the instruction can complete asynchronously. Otherwise if there is no match, the page address is inserted in the associative memory to become the most recent addition. On the recognition of a page fault by the DCU, the associative memory will be cleared to make room for the new entry and others.

Abstract: A multilayer photoresist system for defining very small features on a semiconductor substrate relies on forming a planarization layer directly over the substrate. An image transfer layer is formed over the planarization layer, and a photoresist imaging layer formed over the image transfer layer. The image transfer layer comprises an organic or inorganic resin which has been cured in a non-oxidated plasma. It has been found that such a curing technique provides a particularly smooth and defect-free image transfer layer. Very thin photoresist imaging layers may thus be formed over the image transfer layer, allowing very high lithographic resolution in the imaging layer. The resulting high resolution openings may then be transferred downward to the image transfer layer and planarization layer by etching, allowing the formation of very small geometries on the substrate surface.

Abstract: A temperature compensated sense amplifier is connected to the sense node of a memory array which is OR tied to the bit lines of the array. A PNP current mirror supplies voltage independent controlled current to the sense node. A level shifting stage is connected to the sense node to establish a threshold sensing level, and to switch on to steer the current into the amplifier stage. A compensation stage is connected to the level shifting stage and the amplifier stage to compensate for the .beta. factors of the transistors and the resistive changes with temperature. A temperature compensated current sink is connected to the PNP current mirror to track over temperature in opposition therewith and maintain a constant current into the sense node. The level shifting stage and the amplifier stage also include temperature compensating features to provide a sensing threshold which tracks constantly over the operating temperature range.

Abstract: In the fabrication of bipolar transistors by the single poly process, polysilicon sidewalls are formed along portions of a polysilicon layer that functions as a device contact. The sidewalls serve both as dopant sources which determine the width of underlying base and emitter regions, and as contacts to those devices. Since the thickness of the polysilicon sidewalls, and hence the width of the underlying device regions, are precisely controllable through conventional polysilicon deposition techniques, relatively relaxed design rules can be employed while making possible the formation of emitters having widths less than one-half of a micron.

Abstract: A new method for solder finishing the leads of an integrated circuit package such as a DIP having two parallel rows of leads along the sides of the package. The method contemplates establishing two vertical columns of falling molten solder and spacing the columns apart a distance substantially the width of the package. The package is passed between the vertical columns of falling molten solder immersing the two parallel rows of leads along the sides of the package in the respective columns of molten solder, washing the leads and depositing a finishing layer of solder over the surfaces of the leads. The method further contemplates directing hot nonreacting gas over the leads of the package as the package passes from the columns thereby eliminating excess solder and bridging of solder between the leads. A monorail track system and a new solder bridge for implementing the method are described. The invention may be applied for column fluxing as well as for other column liquid treatments.

Abstract: A microprocessor with a multiplexer having its output coupled to the input of the instruction register for storing instructions to be executed and applying the bits of the instruction as the input signals to a mapping PLA. The inputs of the multiplexer are the information bus coupled to external pins to receive instructions either from external memory or from an external console, and the output of the ALU. The path from the output of the ALU to the input of the instruction register allows better self testing of the processor by iteself and self-generation of input/output instructions. This structure simplifies the processor by allowing console requests, instructions from memory and self generated instructions all to be stored in the same register, i.e., the instruction register, thereby eliminating the need for separate registers for each type of instruction.

Abstract: There is disclosed herein an ECL gate using switchable load impedance means to allow the gate to be placed in a low power-consumption mode while preserving the logic state existing at the outputs of the gate at the time it is switched into the low-power mode. N-channel or P-channel MOS transistors are used as the switchable load impedances. The gates of these transistors are coupled to a MODE control signal which causes the MOS transistors to switch between high-impedance and low-impedance states. Another MOS transistor having its gate coupled to the same MODE control signal is used as the current source for the bias current to the conventional ECL current mirror. When low-power mode operation is desired, all the MOS transistors are switched to their high-impedance states. This reduces the bias current flowing through the ECL gate, thereby reducing its power consumption.

Abstract: The present invention is an improved subscriber line interface circuit which allows fast detection of an off-hook signal in the presence of a ringing signal during an answer mode while also permitting fast detection of dialing pulses during a calling mode. A programmable filter is used in the supervision circuit of the SLIC to allow the cutoff frequency of the filter to be varied so that the 20 Hz ringing signal will be attenuated during a ringing sequence and dialing pulse rates up to 20 Hz will be passed by the filter during the calling mode. A clamping amplifier is used to clamp the received signal to a maximum of 1.5 times the loop threshold current. This eliminates the large variations in the rise and fall times of the pulse dialing signal due to variations in the loop current caused by varying impedances of the telephone line. The filter is programmed by using an analog switch to bypass certain filter elements.

Abstract: A photomask for use in manufacturing integrated circuits is fabricated by coating a thin film of organic material, generally a solution of a thermally decomposable hydrocarbon, onto a glass plate and heating it in a reducing atmosphere to convert it into carbon. The carbon layer is masked and etched; for example, in an oxygen plasma, to produce the mask.

Abstract: A semiconductor wafer having a plurality of integrated circuits is provided. One surface of the wafer includes a plurality of electrical contacts on the circuits which are subsequently attached to leads. The other surface of the wafer is provided with a conductive tape. The wafer is cut, e.g., sawed, resulting in each individual circuit having a pre-attached conductive mounting media. The individual circuits can then be attached to a substrate through the conductive mounting media. Other embodiments are disclosed.

Abstract: A deposition reactor system is described for producing a coating containing a predetermined component on a substrate from a plasma containing such component in an ionized state. The substrate is supported on a susceptor within a reactor chamber to which is introduced a gas containing the predetermined component. A radio frequency field is inductively coupled to the gas, forming a plasma in the reactor chamber in the region of the susceptor. The susceptor is maintained at ground potential in the radio frequency field.

Abstract: A multiple layer tape bonding technique interconnects an integrated circuit chip having signal and ground bonding pads located thereon to other electrical devices. The tape bonding structure is comprised of a first layer having electrically isolated individual signal conductors coupled to respective ones of the signal bonding pads. The individual signal conductors extend away from the integrated circuit chip in an approximately parallel-spaced relationship to one another. An electrically insulating layer having a predefined thickness is deposited atop and adjacent the first layer. A ground plane layer overlies the insulating layer. The ground plane layer is comprised of a plurality of individual ground conductors coupled to respective individual ones of the ground bonding pads of the integrated circuit chip. The individual ground conductors overlie the insulating layer in a precisely spaced parallel relationship to the corresponding individual signal conductors.

Abstract: A fabrication process for integrated circuits having linear bipolar transistors and other circuit elements. The process defines collector contact 32, base 34, and isolation 36 regions in one masking operation. Subsequent masking layers of photoresist 40, 42, 46 are used to shield selected regions during implantation of exposed regions. Circuit density is improved through the use of aluminum doped isolation regions 36. The base region is doped in a single ion implantation step, which is followed by low temperature deposition of a covering oxide layer 48.

Abstract: A method for producing an improved capacitor in MOS technology utilizing a thin layer oxide dielectric to improve the active/parasitic capacitance ratio while maintaining a high breakdown voltage and a low leakage current.A polycrystalline silicon layer is formed over a silicon dioxide field region on a wafer of semiconductor silicon. Phosphorus ions are implanted in the polycrystalline silicon layer at an implant energy between approximately 80 and 100 keV. The surface of the polycrystalline silicon layer is oxidized to form an interpoly oxide, utilizing an oxidation temperature which, for the implant dosage of phosphorus ions used, is sufficient to make the interpoly oxide layer approximately 770 Angstroms thick. The structure is then annealed at a temperature of approximately 1100.degree. C. in oxygen and HCl. A second polycrystalline silicon layer is formed over the interpoly oxide layer, and the process completed in the conventional manner.

Abstract: The present invention is an improved active load which eliminates the current imbalance between the collectors of the emitter-coupled input transistors. The circuit includes a pair of first and second emitter-coupled transistors with their collectors coupled to a current source which supplies substantially equal currents to the collectors of the two transistors. The collector of one of the emitter-coupled transistors is coupled to the base of a third output transistor. A fourth transistor is coupled between the collector of the output transistor and the supply voltage. Finally, the circuit includes means for supplying the base current to the fourth transistor such that the base current of the fourth transistor and the third output transistor are substantially equal and the collector currents of the first and second emitter-coupled transistors remain substantially equal, resulting in negligible offset current and high open loop gain.

Abstract: A programmable charge coupled device transversal filter 5 includes a charge coupled device register 10 for receiving and delaying incoming analog signals, a series of floating gate charge detectors 15, a corresponding number of sets of binary scaled capacitors C.sub.0, . . . 2C.sub.0 . . . 2.sup.n C.sub.0, an output circuit including a positive and negative bus coupled to a differential amplifier, and mask or otherwise definable electrical connections for connecting selected ones of the scaled sets of capacitors between the floating gate 15 corresponding to that set and one of the positive and negative buses 22 and 23.

Abstract: A circuit and method for enabling/disabling a differential signal output from a memory device, such as a bipolar static random access memory, is disclosed. A split bias, current steering circuit includes a first differential amplifier for steering a current I.sub.D along a first current path when a first selected differential input signal, corresponding to a first logic state, is coupled to a first input terminal of said first differential amplifier; and includes a second differentialamplifier for steering current I.sub.D along a second current path when a second selected differential input signal, corresponding to a second logic state, is coupled to a second input terminal of said second differential amplifier. An output stage produces a selected logic output signal according to which of said first and second current paths is selected to steer current I.sub.D. A split bias enable/inhibit stage provides controlled operation of the first and second differential amplifiers.

Abstract: X-ray generation and detection apparatus for use in a computer assisted tomography system which permits relatively high speed scanning. A large X-ray tube having a circular anode (3) surrounds the patient area. A movable electron gun (8) orbits adjacent to the anode. The anode directs into the patient area X-rays which are delimited into a fan beam by a pair of collimating rings (21). After passing through the patient, X-rays are detected by an array (22) of movable detectors. Detector subarrays (23) are synchronously movable out of the X-ray plane to permit the passage of the fan beam.

Abstract: Apparatus for designating contiguous memory locations in a data memory as a circular data buffer. A limit register defines the topmost buffer location and a modulus register defines the length of the buffer. Circuitry detects violations of the upper boundary of the buffer and subtracts the buffer length from the address. Boundary violation circuitry also controls conditional execution of a data processor instruction which conditionally subtracts the buffer length from the address.

Abstract: MOS Control circuitry for incorporation on a microcomputer IC chip for assuring adequate power to maintain the data in an associated static random access memory. A rechargeable battery provides standby power, and the voltage level of the battery is compared with the microcomputer V.sub.cc supply. Whenever V.sub.cc drops below a predetermined level, such as the standby battery voltage level, the circuitry disconnects the V.sub.cc from the memory input power and replaces it with standby battery power. When V.sub.cc is returned to the system, a gate applies a trickle charge to the battery.