Patents Represented by Attorney Stephen S. Strunck
  • Patent number: 6061074
    Abstract: An ion generator for the generation of a plasma is assembled from module subassemblies. The first subassembly includes a dielectric plate 1, on the first surface 1a of which are located a large number of first electrodes 3, and the second surface 1b of which is coated with a structured conductive layer 2. The second subassembly includes an aperatured spacer plate with a large number of dielectric spacers with a second electrode 5 on the side facing away from the dielectric plate 1. In joining the subassemblies together, the aperatured spacer plate is connected to the dielectric plate 1 at its first surface 1a in such a way that cavities 6 for accommodating plasma are formed by the first electrodes 3, parts of the first surface 1a of the dielectric plate 1 and the spacers 4 with the second electrodes 5. The first set of electrodes 3 shield the points where the subassemblies are bonded together from plasma in the cavities.
    Type: Grant
    Filed: January 6, 1997
    Date of Patent: May 9, 2000
    Assignee: International Business Machines Corporation
    Inventors: Johann Bartha, Frank Druschke, Gerhard Elsner, Johann Greschner
  • Patent number: 5912210
    Abstract: There is disclosed herein an invention for increasing the current carrying capability of high-Tc superconductor materials. The inventive method includes irradiating such superconductors with light particles, such as neutrons, protons and thermal neutrons, having energy sufficient to cause fission of one or more elements in the superconductor material at a dose rate and for a time sufficient to create highly splayed (dispersed in orientation) extended columns of damaged material therein. These splayed tracks significantly enhance the pinning of magnetic vortices thereby effectively reducing the vortex creep at high temperatures resulting in increased current carrying capability.
    Type: Grant
    Filed: August 8, 1997
    Date of Patent: June 15, 1999
    Assignee: International Business Machines Corporation
    Inventors: Lia Krusin-Elbaum, Alan David Marwick, Paul William Lisowski, James Russell Thompson, Jr., James Francis Ziegler
  • Patent number: 5897954
    Abstract: A layer of conformationally adaptive organic molecules are used in epitaxially layered structures to accommodate lattice mismatch between layers at least one of which is of a nonorganic crystalline material. Such a layer on a substrate layer may constitute the epitaxially layered structure or the conformationally adaptive organic molecule layer may be used to accommodate a lattice mismatch between two other layers or the substrate and another layer.
    Type: Grant
    Filed: July 10, 1996
    Date of Patent: April 27, 1999
    Assignee: International Business Machines Corporation
    Inventors: James K. Gimzewski, Thomas A. Jung, Reto R. Schlittler
  • Patent number: 5898185
    Abstract: This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode structure that is electroluminescent in the blue or ultraviolet (uv) region of the electromagnetic spectrum when the device is operated. The photoluminescent layer is a photoluminescent organic thin film such as tris-(8-hydroxyquinoline) Al, Alq3, deposited onto the GaN LED and which has a high photoluminescence efficiency. The uv emission from the electroluminescent region excites the Alq3 which photoluminesces in the green. Such a photoconversion results in a light emitting diode that operates in the green (in the visible range). Other colors such as blue or red may be obtained by appropriately doping the Alq3. Furthermore, other luminescent organics in addition to Alq3 may be used to directly convert the uv or blue to other wavelengths of interest.
    Type: Grant
    Filed: January 24, 1997
    Date of Patent: April 27, 1999
    Assignee: International Business Machines Corporation
    Inventors: Nestor A. Bojarczuk, Jr., Supratik Guha, Richard Alan Haight
  • Patent number: 5895932
    Abstract: This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode structure that is electroluminescent in the blue or ultraviolet (uv) region of the electromagnetic spectrum when the device is operated. The photoluminescent layer is a photoluminescent organic thin film such as tris-(8-hydroxyquinoline) Al, Alq3, deposited onto the GaN LED and which has a high photoluminescence efficiency. The uv emission from the electroluminescent region excites the Alq3 which photoluminesces in the green. Such a photoconversion results in a light emitting diode that operates in the green (in the visible range). Other colors such as blue or red may be obtained by appropriately doping the Alq3. Furthermore, other luminescent organics in addition to Alq3 may be used to directly convert the uv or blue to other wavelengths of interest.
    Type: Grant
    Filed: March 5, 1997
    Date of Patent: April 20, 1999
    Assignee: International Business Machines Corporation
    Inventors: Nestor A. Bojarczuk, Jr., Supratik Guha, Richard Alan Haight
  • Patent number: 5882468
    Abstract: By moving a substrate relative to a shadow mask in a reactive ion etching system, we are able to precisely tailor the thickness of critical layers. To minimize disturbing the plasma, all the mechanical components are kept below the anode. The system is highly reproducible, and can be programmed to yield arbitrary vertical profiles along one horizontal axis. Using silicon-on-insulator substrates, the resonance wavelength was modified as a function of position with better than 1 nm control in the vertical dimension. This technique should prove useful for optical devices where the thickness of the layers controls the device characteristics.
    Type: Grant
    Filed: February 24, 1997
    Date of Patent: March 16, 1999
    Assignee: International Business Machines Corporation
    Inventors: John G. Crockett, Bardia Pezeshki, Robert L. Sandstrom
  • Patent number: 5882548
    Abstract: There is disclosed herein novel organic-inorganic layered perovskites of the general formula A.sub.2 MX.sub.4 where A is an organic ammonium cation, M is a divalent rare earth metal and X is a halogen. These compounds can be made by a low temperature (about 100.degree.-160.degree. C.) solid state reaction between the organic ammonium salt with the appropriate hydrogen halide and MX.sub.2 where M is a divalent rare earth metal and X is a halogen). A specific example is (C.sub.4 H.sub.9 NH.sub.3).sub.2 EuI.sub.4 which has been made through a reaction at about 140.degree.-160 C. between C.sub.4 H.sub.9 NH.sub.2. HI and EuI.sub.2. This new compound produces intense blue photoluminescence at room temperature, with a peak wavelength of 460 nm and a fairly narrow peak width (FWHM=24 nm). In addition to the simple aliphatic ammonium cations of the form C.sub.n H.sub.2n+1 NH.sub.3.sup.+, e.g., propylammonium (C.sub.3 H.sub.7 NH.sub.3) and butylammonium (C.sub.4 H.sub.9 NH.sub.
    Type: Grant
    Filed: May 8, 1997
    Date of Patent: March 16, 1999
    Assignee: International Business Machines Corporation
    Inventors: Kangning Liang, David Brian Mitzi
  • Patent number: 5874147
    Abstract: This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system.
    Type: Grant
    Filed: July 15, 1997
    Date of Patent: February 23, 1999
    Assignee: International Business Machines Corporation
    Inventors: Nestor Alexander Bojarczuk, Jr., Supratik Guha, Arunava Gupta, Wade Wai-Chung Tang
  • Patent number: 5871579
    Abstract: A convenient two-step dipping technique for preparing high-quality thin films of a variety of perovskites is provided by the invention. Thin films of Mi.sub.2 (M=Pb, Sn) were first prepared by vacuum-depositing MI.sub.2 onto ash glass or quart substrates, which were subsequently dipped into a solution containing the desired organic ammonium cation for a short period of time. Using this technique, thin films of different layered organic-inorganic perovskites (RNH.sub.3).sub.2 (CH.sub.3 NH.sub.3).sub.n-1 M.sub.n I.sub.3n+1 (R=butyl, phenethyl; M=Pb, Sn; and n=1, 2) and three-dimensional perovskites CH.sub.3 NH.sub.3 MI.sub.3 (M=Pb, Sn; i.e. n=.infin.) were successfully prepared at room temperature. The lattice constants of these dip-processed perovskites are very similar to those of the corresponding compounds prepared by solution-growth or by solid state reactions. The layered perovskite thin films possess strong photoluminescence, distributed uniformly across the film areas.
    Type: Grant
    Filed: September 25, 1997
    Date of Patent: February 16, 1999
    Assignee: International Business Machines Corporation
    Inventors: Kangning Liang, David Brian Mitzi, Michael T. Prikas
  • Patent number: 5835477
    Abstract: The present invention concerns a storage device comprising a local probe array (72) and a storage medium (70) with an array of storage fields (71). The local probe array (72) is situated opposite to the storage medium (70) such that each local probes (73) of the local probe array can be scanned over the corresponding storage field (71). The storage device further comprises circuit for distinguishing between information to be erased from a first section of the storage medium and information in this section which is not to be erased, circuit for selectively copying the information which is not to be erased into a memory, preferably another section of said medium, and circuit for erasing the whole first section.
    Type: Grant
    Filed: July 10, 1996
    Date of Patent: November 10, 1998
    Assignee: International Business Machines Corporation
    Inventors: Gerd Karl Binnig, Heinrich Rohrer, Peter Vettiger
  • Patent number: 5831532
    Abstract: An inexpensive multibit magnetic tag is described which uses an array of amorphous wires in conjunction with a magnetic bias field. The tag is interrogated by the use of a ramped field or an ac field or a combination of the two. The magnetic bias is supplied either by coating each wire with a hard magnetic material which is magnetized or by using magnetized hard magnetic wires or foil strips in proximity to the amorphous wires. Each wire switches at a different value of the external interrogation field due to the difference in the magnetic bias field acting on each wire.
    Type: Grant
    Filed: August 12, 1997
    Date of Patent: November 3, 1998
    Assignee: International Business Machines Corporation
    Inventors: Richard Joseph Gambino, Alejandro Gabriel Schrott, Robert Jacob von Gutfeld
  • Patent number: 5821859
    Abstract: The invention relates to a special type of magnetic tag that serves both as an identifier of the article to which it is attached and as an antitheft device. The former attribute is especially important should stolen property be recovered. Identification comes about through the use of an array of individual magnetic elements that are closely spaced, preferably along and perpendicular to an amorphous wire or strip. The magnetic elements can take the form of magnetic ink, high coercivity wire, thin foil, or amorphous wire. The array may be personalized (coded) by leaving out elements of the array or driving selected elements to saturation while others remain demagnetized. The elements can also be in the form of a double array to constitute `1`s and `0`s to form a code. Reading of the elements is accomplished with a special reading head consisting or one or more small magnetic circuits coupled to one or more pickup loops.
    Type: Grant
    Filed: June 7, 1996
    Date of Patent: October 13, 1998
    Assignee: IBM Corporation
    Inventors: Alejandro Gabriel Schrott, Richard Joseph Gambino, Robert Jacob von Gutfeld
  • Patent number: 5804709
    Abstract: A new method and an apparatus for measuring the deflection of or the force exerted upon a cantilever-type micromechanical element is presented which is based on detecting radiation emitted from the gap between the cantilever (220) and a second surface (230, 231). The radiation, while occurring spontaneously at high frequencies when appropriately biasing the cantilever and the second surface by a voltage, can be enlarged by using external energy sources. The new method and apparatus is also applied to surface investigation, particularly to dopant profiling.
    Type: Grant
    Filed: October 3, 1996
    Date of Patent: September 8, 1998
    Assignee: International Business Machines Corporation
    Inventors: Jean-Philippe M. Bourgoin, Matthew B. Johnson, Bruno Michel
  • Patent number: 5800726
    Abstract: The present invention relates to a chemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant comprising 10-25 gms EDTA, 15-35 gms K.sub.2 HPO.sub.4 and 25-45 gms oxalic acid in a liter of 30% H.sub.2 O.sub.2. More particularly, in the fabrication of interconnections for microchip structures, the present invention addresses the removal of intermediate adherent layers, e.g., Ti--W, without damaging other microchip structures made of other metals, such as Al or Al--Cu test pads; Cu and phased Cr--Cu layers; and Sn--Pb solder bumps. The use of potassium phosphate in the hydrogen peroxide+EDTA bath has been found to significantly reduce the attack on the metal not to be etched. Furthermore, the use of oxalic acid in the bath prevented the deposition of tin oxide on the substrate adherent layer metal, thus facilitating its complete removal.
    Type: Grant
    Filed: July 26, 1995
    Date of Patent: September 1, 1998
    Assignee: International Business Machines Corporation
    Inventors: John Michael Cotte, Madhav Datta, Thomas Edward Dinan, Ravindra Vaman Shenoy
  • Patent number: 5796121
    Abstract: A thin film transistor is described incorporating a gate electrode, a gate insulating layer, a semiconducting channel layer deposited on top of the gate insulating layer, an insulating encapsulation layer positioned on the channel layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer, all of which are situated on a plastic substrate. By enabling the use of plastics having low glass transition temperatures as substrates, the thin film transistors may be used in large area electronics such as information displays and light sensitive arrays for imaging which are flexible, lighter in weight and more impact resistant than displays fabricated on traditional glass substrates. The thin film transistors are useful in active matrix liquid crystal displays where the plastic substrates are transparent in the visible spectrum.
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: August 18, 1998
    Assignee: International Business Machines Corporation
    Inventor: Stephen McConnell Gates
  • Patent number: 5792569
    Abstract: A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.
    Type: Grant
    Filed: March 19, 1996
    Date of Patent: August 11, 1998
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Arunava Gupta, Gang Xiao, Philip Louis Trouilloud, Philippe P. Lecoeur
  • Patent number: 5789666
    Abstract: The invention relates to a resonant sensor with a vibrating body (10) for the determination of at least two physical values characterised by the fact that the vibrating body (10) has at least two partial bodies (1, 2), the vibrating body as a whole (10) being appropriate for the determination of one of the two values and one of the partial bodies (1, 2) or a combination of several partial bodies is appropriate for the determination of the other of the two values. The individual partial bodies (1, 2) of the vibrating body can differ both in their geometric, dimensions and or in the materials of which they are composed. The measurement of the individual physical values takes place in a fundamental mode of the vibrating body as a whole (10) or of the relevant partial body (1, 2).
    Type: Grant
    Filed: November 15, 1996
    Date of Patent: August 4, 1998
    Assignee: International Business Machines Corporation
    Inventors: Thomas Bayer, Johann Greschner, Gerhard Schmid, Volker Wolf
  • Patent number: 5790025
    Abstract: The multiple scattering of coherent radiation in an inhomogeneous medium is used to detect attempted intrusions into a protected area or into a tamper-proof package for such purposes as preventing the unauthorized detection and copying of electronic information used for authentication and coding in electronic commerce, communications, command, and control systems. A key advantage is that any intrusion into the sensed volume will produce a detected change in the measured intensity which will be equal to the full amplitude range if the intrusion is into a cylinder with radius comparable to the wavelength of the sensing radiation. The response of the medium can also be used to provide a unique identity key.
    Type: Grant
    Filed: August 1, 1996
    Date of Patent: August 4, 1998
    Assignee: International Business Machines Corporation
    Inventors: Nabil Mahmoud Amer, David Peter DiVincenzo, Neil Gershenfeld
  • Patent number: 5786690
    Abstract: The present invention provides a miniature three-axis instrument for measuring the actual magnetic field vector. The novel instrument of the invention has three magnetometers on a single chip configured such that their pickup elements are coplanar, colinear and in fairly close proximity to each other. The tip of the chip, with the three pickup elements, is fashioned to allow as close an approach to the surface to be scanned as is possible with current single magnetometer scanning microscopes. The different positions of the pickup elements on the chip is compensated for digitally after data acquisition. The z-axis magnetometer has a planar pickup coil structure as is known in the art while the x-axis and y-axis sensing elements have a novel multi-turn, thin-film structure in the form of a planar solenoid which is another novel aspect of the present invention.
    Type: Grant
    Filed: August 18, 1994
    Date of Patent: July 28, 1998
    Assignee: International Business Machines Corporation
    Inventors: John Robert Kirtley, Mark Benjamin Ketchen
  • Patent number: 5755859
    Abstract: A process for electrolessly depositing cobalt-tin alloys with adjustable tin contents from 1 to over 25 atomic percent tin is disclosed. The deposited alloy is useful in the electronics and computer industries for device, chip interconnection and packaging applications. When used for chip interconnection applications, for example, the invention replaces the currently used complicated ball-limiting-metallurgy. The invention may also be used to inhibit hillock formation and electromigration in copper wire structures found in computers and micron dimension electronic devices.
    Type: Grant
    Filed: August 24, 1995
    Date of Patent: May 26, 1998
    Assignee: International Business Machines Corporation
    Inventors: Vlasta A. Brusic, Jeffrey Robert Marino, Eugene John O'Sullivan, Carlos Juan Sambucetti, Alejandro Gabriel Schrott, Cyprian Emeka Uzoh