Abstract: A semiconductor device has: a gate insulator film of a transistor formed in a predetermined region on a region of a first conductivity type; a gate electrode of the transistor formed on the gate insulator film; a diffusion layer of a second conductivity type formed on both sides of the gate insulator film on the region of the first conductivity type; and a diffusion layer of the first conductivity type formed on the region of the first conductivity type so as to surround the gate insulator film and the diffusion layer of the second conductivity type. The diffusion layer of the first conductivity type has a higher impurity concentration than the region of the first conductivity type. In such a semiconductor device, the diffusion layer of the first conductivity type is formed so as to be separated from the gate insulator film.

Abstract: A fuzzy computer basically includes a plurality of fuzzy membership function generator circuits, and a fuzzy inference engine for executing a predetermined fuzzy operation among fuzzy membership functions that have been generated. A fuzzy membership function is represented by electric signals distributed on a plurality of lines.

Abstract: The method is especially suitable for two identical groups of elements, and for supplying a continuous current traction motor. The commutating means modifies the coupling of groups of elements from parallel to series and conversely, as a function of the power demanded for driving the motor. The current supply of the motor is ensured by pulses delivered by a chopper type device monitored as a function of the power demanded. The commutating means e.g. a thyristor are actuated in synchronism with the operation of the chopper type device.