Abstract: A random access memory using complementary field effect transistors, comprising an array of a plurality of storing locations, address signal lines for addressing said plurality of storing locations, a data signal line commonly coupled to said plurality of storing locations for inputting/outputting a data signal, each said location comprising a flip-flop including first and second inverters cross connected to each other and each implemented by complementary field effect transistors, field effect switching transistors connected in series with said first inverter and to be non-conductive in a write operation mode, a transmission gate connected between the input/output node of said flip-flop and said data signal line to be operable as a function of the signal in said address signal line, said transmission gate comprising two complementary field effect switching transistors connected in parallel with each other, each individually responsive to the complementary states of the address signal in said address signal l

Abstract: An elastic surface wave filter having a substrate of ceramic material and input and output transducer electrodes of interleaved-comb-type rigidly mounted on one surface of the substrate. A top covering is mounted on the electrode-mounted surface of the substrate. This substrate concurrently serves as a medium through which, when the filter is energized, an elastic surface wave is propagated from the input transducer electrode towards the output transducer electrode and also as a closure for closing the opening of the top covering.