Abstract: A method and apparatus for removal of volatile contaminants from substrate surfaces before the substrate enters a process chamber. Substrate cleaning is achieved by irradiating the substrate with a low-energy electron beam. The interaction of the electrons in the beam with the contaminants present on the surface of the substrate causes evaporation of low vapor pressure species which can be deposited on the surface. A cryoshield pumps the evaporated species. After evaporation and pumping, the substrate passes through a glow discharge chamber wherein the negative surface charge created by the electron beam is neutralized using positive ions. The inventive apparatus can be configured so that no separate vacuum chamber is needed to prepare the substrate.

Abstract: To shorten a required estimation time while keeping an estimation precision in an object environment given for estimating propagation characteristics with a ray launching method. In the case where a ray is propagated within a given observation area, and collides with a barrier residing on its path, a space in the vicinity of the ray is divided into a plurality of partial spaces until a predetermined condition is satisfied. The space in the vicinity of the ray that is considered to cause a degradation in the estimation precision is divided in reflection until there is less influence of degradation, whereby each of the subdivided partial spaces can be handled individually, so that the estimation precision of radio wave propagation characteristics can be made better than a conventional method.

Abstract: A method and apparatus for reducing speckle during inspection of articles used in the manufacture of semiconductor devices, including wafers, masks, photomasks, and reticles. The coherence of a light beam output by a coherent light source, such as a pulsed laser, is reduced by disposing elements in a light path. Examples of such elements include optical fiber bundles; optical light guides; optical gratings; an integrating sphere; and an acousto-optic modulator. These various elements may be combined as desired, such that light beams output by the element combinations have optical path length differences that are greater than a coherence length of the light beam output by the coherent light source.

Abstract: Method and apparatus to enable detection of a position of an article, and thereby enable maintenance of a desired position thereof. The apparatus includes an illumination unit, focusing optics and a focus detection unit, the focusing optics serving to direct incident light toward the article and directing light returned from an illuminated elongated region on the article toward the focus detection unit. The focus detection unit includes an optical system that collects the returned light passed through the focusing optics and creates at least two images in the form of at least two interference patterns, respectively, on the sensing surface of a detector. The first interference pattern is created by interference of light components of the collected light that propagated within a first periphery region of an optical axis of the focusing optics and light components of the collected light that propagated within a paraxial region of the optical axis.

Abstract: A waveguide made of optical glass used as an detector in electron microscopy, having a beveled hole through which an electron beam passes and a phosphor coated region to detect secondary and back-scattered electrons. The photons generated by secondary and back-scattered electrons striking the phosphor coated region are directed to a photomultiplier detector mated to the waveguide by internal reflections which are further enhanced by reflective surfaces. Further, photon transmission from the waveguide to the photomultiplier is enhanced by providing a flared section at the mating end to reduce internal reflections.

Abstract: A kill index classification method for prioritizing relational aspects of topological defect intersections, particularly in association with an intermediate analytical testing stage of a multi-stage semiconductor fabrication process. The method relates to an analysis of the geometrical relationship between non-predetermined portion(s), generally referred to as defects, and the surrounding predetermined topology of a conductive semiconductor pattern, to determine the effect of defects on the functionality and reliability of a wafer, and particularly an examined die thereon. Further, in accordance with this geometrical information, a preferred classification of the effects of defects into a numerical value, the “kill index”, is achieved. Preferably, this kill index is strongly linked, correlated and related to the damage caused by the defect to the functionality and/or reliability of the underlying integrated circuit.

Abstract: A method for setting at least one selected parameter of a processing tool. The processing tool is utilized for processing articles in a production line. Initially, the selected parameter is set to an initial value and one such article is positioned for processing. The article is sequentially processed by the processing tool a certain number of times and corresponding processed data are obtained. The processed data are analyzed so as to determine whether or not the processed data satisfy predetermined result criteria. Upon detecting that the processed data do not satisfy the result criteria, the selected parameter is changed to a tuned value and the processing, obtaining the processed data and analyzing thereof, are repeated as many times as required until the result criteria is satisfied.

Abstract: A scanning angle expander that includes a converting optics for receiving an input beam, the input beam being inclined with respect with an optical axis of the converting optics by an input scan angle, and for converting the input beam to multiple output beamlets, each output beamlet being inclined with respect to the optical axis of the converting optics by an output scan angle; and expanding optics, for converting the multiple output beamlets to an output beam that is substantially parallel to the output beamlets, whereas the output beam and the input beam have substantially a same size.

Abstract: An inspection system using dark field imaging includes a multiple beam laser scanning unit and at least one multiple beam dark field imaging unit. The laser scanning unit generates multiple beams which illuminate multiple spots on a surface to be scanned. The imaging unit separately detects light scattered from the multiple spots. The spots are separated by a separation distance which ensures that scattered light from each associated spot are received only by its associated photodetector. Each imaging unit includes collection optics and multiple photodetectors, one per spot. In one embodiment, where there is no gap between scan lines, three detectors are used to detect two spots. The collection optics and photodetectors are mounted so as to separate the light scattered from the different scan lines. In one embodiment, this separation is provided by arranging the collection optics and photodetectors according to the principles of Scheimpflug imaging.

Abstract: Novel method and apparatus are disclosed for inspecting a wafer surface to detect the presence thereon of exposed conductive material, particularly for determining the integrity of contact holes and vias, in semiconductor wafer manufacturing. The method comprises the steps of irradiating a spot of the wafer surface with a beam having a wavelength sufficiently shorter than the working function of the metal, such as deep UV light beam, collecting the electrons released by the irradiated wafer, generating an electrical signal that is a function of the collected electrons, and inspecting the signal to determine whether the contact holes or vias within the irradiated wafer spot are open. The apparatus comprises a vacuum chamber having therein a stage and chuck for supporting the wafer. An illumination source generates irradiating energy which is formed into a beam using appropriate optics so as to obtain the desired beam spot of the wafer's surface.

Abstract: A two dimensional sensor array is used to collect light diffracted from the inspected substrate. The signal generated by each individual sensor is passed through a threshold. Those signals which are below the threshold are amplified and are summed up. The summed signal is then passed through a second threshold. Summed signals which pass the second threshold are flagged as indicating suspect locations on the substrate. In the preferred embodiment, the entire circuitry is provided in the form of a CMOS camera which is placed in the Fourier plane of the diffracted light.

Abstract: Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]otane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

Abstract: A charged particle beam method and apparatus use a primary electron beam to irradiate a specimen so as to induce the specimen to emit secondary and backscattered electrons carrying information about topographic and material structure of the specimen, respectively. The specimen may be an article to be inspected. The electrons emitted by the specimen are deflected in the electric field of an electron mirror and detected using an electron detector of the apparatus. The electron mirror permits the detection of the secondary electrons traveling close to the optical axis of the apparatus and corrects the aberrations of the secondary electrons. In addition, the electron mirror accelerates the electrons improving the detection efficiency of the electron detector and enhancing the time-of-flight dispersion characteristics of the secondary electron collection. A second electron mirror can be provided to further control the direction of the electron's landing on the surface of the electron detector.

Abstract: A system and a method for fast characterization of sample's material composition, which is especially beneficial for semiconductor fabrication. The material composition is characterized by analyzing secondary electrons emission from the sample. According to one feature, electron detector is used to collect secondary electrons emanating from the sample. The detector is controlled to collect a specific narrow band of secondary electrons, and the band is controlled to allow for collection of SE at different energies. Two modes are disclosed: spot mode and secondary electron spectroscopy material imaging (SESMI). In the spot mode, a spectrum of SE is obtained from a single spot on the sample, and its characteristics are investigated to obtain information of the material composition of the spot. In the SESMI mode, an SEM image of an area on the sample is obtained. The SE spectrum at each pixel is investigated and correlated to a particular spectrum group.

Abstract: Method and apparatus for optical inspection of a patterned article are presented. A region on the article is illuminated with incident light to produce light returned from the illuminated region. An image of the illuminated region is acquired and analyzed for determining the intensity distribution of light components scattered from the pattern of the illuminated region within a certain collection angular field located outside a solid angle of propagation of specularly reflected light. Based on the determined distribution, light components scattered from the illuminated region and propagating with at least one predetermined solid angle segment of the certain collection angle are collected and directed to a dark-field detection unit.

Abstract: A column for directing a beam of charged particles with a finite energy spread onto a specimen surface under an oblique beam landing angle comprises: a particle source; an objective lens; a deflection unit for deflecting the beam of charged particles away from the optical axis such that the beam.of charged particles traverses the objective lens off-axis, thereby causing a chromatic aberration, a compensation unit adapted to disperse the beam of charged particles, thereby substantially compensating said chromatic aberration in the plane of the specimen surface, whereby the combined action of the objective lens and the deflection unit directs the beam of charged particles to hit the specimen surface under said large beam landing angle.

Abstract: A charged particle beam column with a first vacuum chamber further comprises a particle source for providing a beam of charged particles and a multi aperture unit with at least two beam defining apertures for shaping the beam of charged particles. The particle source and the beam defining apertures are located within the first vacuum chamber. A separation unit for isolating a second vacuum chamber from the first vacuum chamber whereby the separation unit comprises a path aperture for the charged particle beam is arranged between the first and second vacuum chamber. A first deflecting unit directs the beam of charged particles through one of the beam defining apertures and a second deflecting unit directs the beam of charged particles through the path aperture.

Abstract: According to one aspect of the present invention, there is provided a method for controlling of charged particle beam to compensate for a potential being present on a specimen, the method comprising the steps of: moving a charged particle beam over the specimen; measuring at least one secondary product and/or backscattered particles coming from the specimen to produce an image signal; scoring the image signal; changing the beam energy; analyzing the scores achieved with different beam energies; and adjusting the beam energy based on the analysis, to compensate for the potential being present on the specimen.

Abstract: A blanker assembly for an electron beam column obtains synchronicity between the beam blanking signal propagating through its blanker plates and the associated electron beam which is being blanked. Since the blanking signal travels faster than does the electron beam, the desired synchronicity is achieved by use of a dielectric material for propagating the blanking signal to slow down this signal to match the electron beam velocity. By using a dielectric material for high frequency (RF) blanking signals, there will be less signal reflection and greater blanking accuracy because the electron beam is continuously deflected. The blanker plates each include a substance having a relatively low dielectric constant for proipagating the blanking signal between an upper deflection region. The relative slowness of the propagation of the blanking signal between the upper and lower deflection regions provides a delay effect so as to synchronize the blanking signal with the associated electron beam.

Abstract: A solid-state image sensing device having: a plurality of sensing means arrayed in the form of a matrix; a charge accumulation means that is connected to the sensing means and accumulates a charge generated at the sensing means; an accumulable charge adjusting means that adjusts the amount of accumulable charge of the charge accumulation means; and a control means that controls the accumulable charge adjusting means. The control means controls the amount of accumulable charge to vary continuously or discontinuously in time series within one imaging period and within a given amount of accumulable charge of the control means.