Abstract: A controlled-flow microwave instrument for chemical synthesis that includes heterogeneous or highly viscous materials. Includes a fluid reservoir for supplying or receiving fluids, a fluid pump in fluid communication with the reservoir for pumping fluids to or from the reservoir, a microwave transparent reaction vessel in fluid communication with the pump for supplying or receiving fluids to or from the pump and the reservoir, a pressure sensor in fluid communication with the reservoir and the vessel for measuring the pressure of fluids in the instrument at the sensor, and a processor in signal communication with the pressure sensor and the pump for controlling the pump and the flow of fluids in the instrument based at least in part on the pressure measured at the sensor.

Abstract: An apparatus and method for producing self-texturing hollow fiber that exhibits a desirable tendency to coil rather than to bend sharply or zig-zag. In one embodiment the invention is a spinneret for the production of hollow filament having first and second curved slots where each slot is defined by a first end having a first width and a second end having a second width and where the first and second ends are separated by an intermediate portion possessing a non-uniform width. In another embodiment the invention is a method for of producing generally cylindrical hollow filaments comprising extruding a polymer melt through a spinneret having first and second curved slots where each slot has a first end having a first width and a second end having a second width and where the first and second ends are separated by a intermediate portion possessing a non-uniform width along the continuum defined by the distance between the first end and the second end.

Abstract: A controlled-flow microwave instrument for chemical synthesis using heterogeneous or highly viscous starting materials includes a microwave source for generating electromagnetic radiation in the microwave frequencies, a microwave cavity in wave communication with the source for exposing compositions placed therein to microwave radiation, a microwave-transparent pressure resistant reaction vessel in the cavity, a source reservoir for starting materials and related compositions, a pump in communication with the source reservoir for pumping heterogeneous or highly viscous materials from the source reservoir to the reaction vessel, and a pressure-resistant valve between the pump and the reaction vessel for isolating the reaction vessel from the pump and the source reservoir during application of microwave energy to compositions in the vessel and from any resulting high pressures generated therein.

Abstract: A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride, aluminum indium nitride, or indium gallium nitride. Also disclosed is a light emitting device that incorporates the disclosed contact structures.

Abstract: An apparatus for increasing the quality of sound from an acoustic source comprises in one embodiment a hollow enclosure, an acoustic source, an acoustic guide, a pair of acoustic inlet openings, a pair of acoustic exit openings, and pair of acoustic paths, wherein the acoustic inlet openings separate acoustic waves from the acoustic source and direct the acoustic waves the length of the acoustic paths to the acoustic exit openings in such a manner as to increase the quality of sound, and especially bass sound, from the acoustic source.

Abstract: A pressure-measuring vessel system for microwave assisted chemical processes is disclosed. The vessel system includes a pressure resistant vessel that is otherwise transparent to microwave radiation, a pressure-resistant closure for the mouth of the vessel, with portions of the closure including a pressure resistant synthetic membrane, a pressure transducer external to the vessel, and a tube extending from the transducer, through the membrane and into the vessel for permitting the pressure inside the vessel to be applied against the transducer while the closure and membrane otherwise maintain the pressure resistant characteristics of the vessel.

Abstract: A light emitting device uses a source of exciting radiation such as an light emitting diode to excite a photo luminescent material to provide a source of visible light. The photo luminescent material is loaded into a low density material such as a xerogel or an aerogel which is adjacent the source of exciting radiation.

Abstract: A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.

Abstract: A container for the convenient transport and storage of fishing lures, particularly crank baits, is disclosed. The container includes channels running parallel to one another, with curved or slanted walls so that the bottom of the channel is offset from the top. A portion of each channel is therefore beneath a portion of the neighboring channel. This small area creates a nesting space for the treble hooks of the lures, with the weight of the lure tending to immobilize the hooks against the barrier, preventing them from tangling with each other, or other lures.

Abstract: A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion.

Abstract: A semiconductor structure for light emitting devices includes a Group III nitride active layer positioned between a silicon carbide cladding layer and a Group III nitride cladding layer, wherein the silicon carbide cladding layer and the Group III nitride cladding layer have opposite conductivity types. Moreover, the silicon carbide cladding layer and the Group III nitride cladding layer have respective bandgaps that are larger than the bandgap of the active layer.

Abstract: A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device on a first surface of a silicon carbide substrate and with at least one metal contact for the device on the first surface of the substrate. The opposite, second surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished second surface of the silicon carbide substrate to define a predetermined location for a via that is opposite the device metal contact on the first surface; etching the desired via through the desired masked location until the etch reaches the metal contact on the first surface; and metallizing the via to provide an electrical contact from the second surface of the substrate to the metal contact and to the device on the first surface of the substrate.

Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a passivation layer on the ohmic contact. The diode is characterized in that it will emit at at least 50% of its original optical power and remain substantially unchanged in operating voltage after operating for at least 1000 hours at 10 miliamps in the environment of 85% relative humidity at a temperature of 85 C. An LED lamp incorporating the diode is also disclosed.

Abstract: The vessel assembly includes a polymeric cylinder and a circular polymeric cap for the cylinder, the cylinder being closed at one end and open at the other end to receive the cap. The open end of the cylinder has a lip that is beveled inwardly from the open end, and the circular polymeric cap has a beveled lower edge that engages the beveled lip when the cap is place upon the polymeric cylinder. For high pressure applications, a choke cylinder depends from the beveled lower edge of the cap, and has an outer diameter substantially the same as the inner diameter of the polymeric cylinder so that the choke provides a self sealing mechanism for the cylinder as pressure from a chemical reaction increases within the cylinder. A composite sleeve surrounds the polymeric cylinder, and includes at least one wound fabric layer in which the winding can be a filament or a yarn.

Abstract: A self sealing vessel assembly for high pressure microwave assisted chemistry is disclosed. The vessel assembly includes a polymeric cylinder and a circular polymeric cap for the cylinder, the cylinder being closed at one end and open at the other end to receive the cap. The open end of the cylinder has a lip that is beveled inwardly from the open end, and the circular polymeric cap has a beveled lower edge that engages the beveled lip when the cap is place upon the polymericcylinder. For high pressure applications, a choke cylinder depends from the beveled lower edge of the cap, and has an outer diameter substantially the same as the inner diameter of the polymeric cylinder so that the choke provides a self sealing mechanism for the cylinder as pressure from a chemical reaction increases within the cylinder. A composite sleeve surrounds the polymeric cylinder, and includes at least one wound fabric layer in which the winding is selected from the group consisting of filaments and yarns.

Abstract: A method is disclosed for carrying out microwave assisted chemical reactions. The method includes the steps of placing reactants in a microwave-transparent vessel, placing the vessel and its contents into a microwave cavity, applying microwave radiation within the cavity and to the vessel and its contents while concurrently externally cooling the vessel conductively.

Abstract: A semiconductor device is disclosed that includes a semiconductor substrate having a first surface and a second surface and a first conductivity type and at least one epitaxial layer on the first surface of the semiconductor substrate. The epitaxial layer is formed of a material with a dissociation temperature below that of the semiconductor substrate. A zone of increased carrier concentration is in the semiconductor substrate and extends from the second surface of the semiconductor material toward the first surface. A layer of metal is deposited on the second surface of the semiconductor substrate and forms an ohmic contact at the interface of the metal and the zone of increased carrier concentration.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1; a second n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1?xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1?x?yN barrier layers where 0?x?1 and 0?y?1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers.

Abstract: A semiconductor structure is disclosed that enhances quality control inspection of device. The structure includes a substrate having at least one planar face, a first metal layer on the planar face, and covering some, but not all of the planar face in a first predetermined geometric pattern, and a second metal layer on the planar face, and covering some, but not all of the planar face in a second geometric pattern that is different from the first geometric pattern. A quality control method for manufacturing a semiconductor device is also disclosed. The method includes the steps of placing a first metal layer on a semiconductor face of a device in a first predetermined geometric pattern, placing a second metal layer on the same face of the device as the first layer and in a second predetermined geometric pattern that is different from the first geometric pattern, and then inspecting the device to identify the presence or absence of one or both of the patterns on the face.