Patents Represented by Attorney Susan Hill

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  • Electrostatic discharge circuit and method therefor
    Patent number: 7236339
    Abstract: An ESD protection circuit (81) and a method for providing ESD protection is provided. In some embodiments, an N-channel transistor (24), which can be ESD damaged, is selectively turned on and made conducting. The purpose of turning on the N-channel transistor (24) is to maximize the Vt1 of the N-channel transistor (24). Vt1 is the drain-to-source voltage point at which the parasitic bipolar action of the N-channel transistor (24) first occurs. In some embodiments, the ESD protection circuit (81) includes a diode (64) which provides an additional current path from the I/O pad 31 to a first power supply node (76).
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: June 26, 2007
    Assignee: Freescale Semiconductor, Inc.
    Inventors: James W. Miller, Michael G. Khazhinsky, Michael Stockinger
  • Electrostatic discharge circuit and method therefor
    Patent number: 6879476
    Abstract: An ESD protection circuit (81) and a method for providing ESD protection is provided. In some embodiments, an N-channel transistor (24), which can be ESD damaged, is selectively turned on and made conducting. The purpose of turning on the N-channel transistor (24) is to maximize the Vt1 of the N-channel transistor (24). Vt1 is the drain-to-source voltage point at which the parasitic bipolar action of the N-channel transistor (24) first occurs. In some embodiments, the ESD protection circuit (81) includes a diode (64) which provides an additional current path from the I/O pad 31 to a first power supply node (76).
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: April 12, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Michael G. Khazhinsky, James W. Miller, Michael Stockinger