Abstract: A method and structure for protecting an integrated circuit from electrostatic discharges are disclosed. A Schottky diode (22) is connected to an input bond pad (12) and to a MOSFET transistor (17) which is desired to be protected. The normally high breakdown voltage required to drive the Schottky diode (22) into conduction is reduced by providing a trigger transistor (24) for prematurely triggering the diode (22). When the base-collector junction of the common emitter configured trigger transistor (24) is driven into avalanche breakdown by the electrostatic discharge, charged carriers (60) are generated, and attracted by the Schottky diode (22). The base (54) of the trigger transistor (24) is biased during normal operations with a supply voltage, and during electrostatic discharges to a higher voltage by an inherent Zener diode (64).

Abstract: A floating gate junction filed-effect transistor image sensor element (10) is formed in a semiconductor layer (14). a drain region (20) of a first conductivity type of the elements (14) is formed adjacent a gate region (26). A potential barrier (98) is formed in the gate region (26) fo rcollecting carriers (102) of the second conductivity type, the barrier (98) also acting as a probing current well. A capacitor (28, 32, 48) is coupled to the gate region (26) and is operable to deliver a pulse to gate region (26) for sweeping out the carriers (102) to the substrate (12). The difference in gate bias voltage caused by the absence of the collected carriers (102) is sensed at a sense node (116) coupled to a source region (30).

Abstract: A memory device (10) includes switching circuitry 22 comprising sensing and control circuits (24 and 26) to predict the next state of the output of memory device (12) and to turn on and off current sources (20) responsive to said memory output to provide faster output transitions.