Abstract: A method is provided for forming a through substrate via in a compound semiconductor having a transistor on a front side of the substrate. The method comprises forming a protective stop pad over a contact area on the front side of the substrate, forming a contact pad overlying the protective stop pad, such that the contact pad is in contact with a terminal of the transistor and plasma etching a backside of the substrate to form a contact coupling via to the protective stop pad. The method further comprises performing a chemical wet etch to remove the protective stop pad and depositing a conductive contact layer in the contact coupling via to provide a conductive contact to the contact pad.

Abstract: The method is characterized by identifying each form stack (8) with regard to the identity received during manufacture thereof, the information received regarding the identity of the form stack (8), comparing the information received regarding the identity of the form stack (8) with stored information regarding the identities of one or more form stacks (8) sorted in the storage system (11), sorting form stacks (8) with a certain identity in such compartments in the storage system (11) containing a form stack or form stacks (8) with the same identity if, during the identity comparison, it is determined that there is/are one or more form stacks (8) with the same identity in a certain compartment in the storage system (11), sorting form stacks (8) with a certain identity in a free compartment in the storage system (11) if, during the identity comparison, it is determined that there is/are not one or more form stacks (8) with the same identity in the storage system, and removing stored identity information when a