Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
Type:
Grant
Filed:
July 28, 1993
Date of Patent:
April 11, 1995
Assignee:
Applied Science and Technology Inc.
Inventors:
Evelio Sevillano, Lawrence P. Bourget, Richard S. Post