Abstract: A method for fabricating a field emission display is disclosed. The method includes the steps of arranging a sealing layer between a face plate and a substrate, heating the sealing layer until the sealing layer adheres to the face plate and the substrate, and then pulling the face plate away from the sealing layer so that the vacuum is improved. The sealing layer may be constructed from glass and heated with a heating coil made from ni-chrome wire. The elements can be positioned using industrial robots using common manufacturing techniques.
Abstract: A method is provided for depositing aluminum thin film layers to form contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
Type:
Grant
Filed:
April 6, 1995
Date of Patent:
July 27, 1999
Assignee:
STMicroelectronics, Inc.
Inventors:
Fusen E. Chen, Fu-Tai Liou, Yih-Shung Lin, Girish A. Dixit, Che-Chia Wei