Patents Represented by Law Firm Thomas, Kayden, Horstemeyer & Rilsey
  • Method of forming electrostatic discharge protection structure of dynamic random access memory
    Patent number: 6008081
    Abstract: A dynamic random access memory's (DRAM's) electrostatic discharge (ESD) protection circuit structure and its method of manufacture, wherein the ESD protection circuit and the capacitors are formed at the same time. The ESD protection circuit has a heavily doped drain structure so that hot carriers can be recruited for discharging electrostatics and a better electrostatic discharge protection can be achieved. Furthermore, no additional electrostatic discharge implant operations are necessary.
    Type: Grant
    Filed: July 30, 1998
    Date of Patent: December 28, 1999
    Assignee: United Microelectronics Corp.
    Inventor: Tsung-Chih Wu