Patents Represented by Attorney Thomas, Layden, Horstemeyer & Risley

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  • Copper interconnects
    Patent number: 7253524
    Abstract: A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch stop layer has a dielectric constant smaller than 3.5, and the dielectric layer has a dielectric constant smaller than 3.0.
    Type: Grant
    Filed: March 10, 2004
    Date of Patent: August 7, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zhen-Cheng Wu, Tzu-Jen Chou, Weng Chang, Yung-Cheng Lu, Syun-Ming Jang, Mong-Song Liang