Abstract: The present invention relates to a therapeutic probe adapted to aid in the insertion and navigation of the probe into delicate tissue structures, and to provide protection of adjacent tissue structures.
Abstract: An intervertebral motion disc comprising core material surrounded by a non-resorbable outer shell having a sidewall surrounding the core, wherein the sidewall of the outer shell has a hardness of more than 80 Shore A.
Abstract: This invention relates to a mixing and delivery device suitable for delivering injectable biomaterials, and to preferred bone cement formulations.
Type:
Grant
Filed:
February 15, 2001
Date of Patent:
March 7, 2006
Assignee:
DePuy Acromed, Inc.
Inventors:
John C. Voellmicke, Paul J. Mraz, Robert Sommerich, John Buonanno, Francis Peterson, Todd Bjork, Mark Duffy
Abstract: This invention relates to a method of treating an intervertebral disc comprising locally identifying a pathologic tissue site and therapeutically treating the identified site.
Type:
Grant
Filed:
September 30, 2002
Date of Patent:
December 7, 2004
Assignee:
Depuy Spine, Inc.
Inventors:
Thomas P. Ryan, Martin A. Reynolds, Hassan Serhan
Abstract: This invention relates to a process comprising the steps of:
a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400° C. and 1450° C.,
b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon
c) providing a cover mix comprising:
i) an alloy comprising a metallic infiltrant and the coating element, and
ii) a resin,
d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body,
e) heating the cover mix to a temperature between 1410° C. and 1450° C. to melt the alloy, and
f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.
Type:
Grant
Filed:
July 10, 1998
Date of Patent:
June 12, 2001
Assignee:
Saint-Gobain Industrial Ceramics, Inc.
Inventors:
Sai-Kwing Lau, Salvatore J. Calandra, Roger W. Ohnsorg
Abstract: This invention relates to a siliconized silicon carbide-base composite comprising at least about 71 vol % converted-graphite SiC matrix having open porosity, wherein the open porosity of the matrix is essentially filled with silicon, and the composite has a total metallic impurity content of no more than 10 ppm.
Abstract: This invention relates to an all-ceramic bearing having wherein the fracture toughness and hardness values of the rings and roller elements are adjusted to produce pseudo-plastic contact, high resistance to roller contact fatigue and high resistance to wear.
Abstract: An electrical connection for a ceramic hot surface element in which the ends of the hot surface element are essentially interference fit within a pair of metallic termination sleeves, and electrical connection to the hot surface element is provided by an active metal braze which is directly chemically bonded to the metallic termination.
Type:
Grant
Filed:
February 19, 1999
Date of Patent:
June 20, 2000
Assignee:
Saint-Gobain Industrial Ceramics, Inc.
Inventors:
John Cooper, Bela Nagy, David Shum, Brian Kochan, Scott Hamel
Abstract: This invention relates to a densified zirconia ceramic partially stabilized by between 3.8 mol % and 4.4 mol % yttria, wherein the ceramic has a flexural strength of at least 900 MPa after immersion in liquid water having a temperature of 250.degree. C. for 48 hours in an autoclave.
Abstract: This invention relates to a support zone for a hairpin-style ceramic igniter, the support zone comprising AlN and SiC, and preferably alumina.
Type:
Grant
Filed:
December 21, 1998
Date of Patent:
February 22, 2000
Assignee:
Saint-Gobain Industrial Ceramics, Inc.
Inventors:
Craig A. Willkens, Linda S. Bateman, Roger Lin
Abstract: A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:(a) less than or equal to about 0.001; and(b) greater than or equal to about 0.01.A process for producing a controlled dielectric loss, sintered aluminum nitride body, comprising heat treating an aluminum nitride body at sintering temperatures, including providing a heat treatment atmosphere which effects a selected nitrogen vacancy population in the aluminum nitride body at the sintering temperatures, and cooling the aluminum nitride body from sintering temperatures at a controlled rate and in a cooling atmosphere effective to control the selected nitrogen vacancy population.
Type:
Grant
Filed:
March 28, 1996
Date of Patent:
January 25, 2000
Assignee:
Carborundum Corporation
Inventors:
Rudolph C. Enck, Jonathan H. Harris, Robert A. Youngman, Thomas S. Nemecek
Abstract: This invention relates to the use of a continuously energized ceramic igniter in providing a "relight" function in stovetop cooking applications.
Type:
Grant
Filed:
February 19, 1999
Date of Patent:
December 14, 1999
Assignee:
Saint-Gobain Industrial Ceramics, Inc.
Inventors:
Craig A. Willkens, Linda S. Bateman, Dean Croucher
Abstract: A raw batch for producing a crack-free recrystallized silicon carbide body, the raw batch comprising:i) at least 40 w/o fine grain fraction having a particle size of less than 10 microns, the fine grain fraction comprising silicon carbide and fine free carbon, wherein the fine free carbon is present in an amount of at least 0.10 w/o of the raw batch, the fine free carbon having a surface area of at least 10 m.sup.2 /g,ii) at least 40 w/o coarse grain fraction having a particle size of at least 30 microns, the coarse grain fraction comprising silicon carbide and coarse free carbon, wherein the coarse free carbon is present in an amount of at least 0.10 w/o of the coarse grain fraction,the raw batch having a total silica content of at least 0.5 w/o,the raw batch having a total silicon carbide content of at least 96 w/o.
Abstract: The invention relates to a ceramic hip joint prosthesis head for use with a trunnion, the trunnion having a frustoconical end comprising a first section having a diameter of about 12 mm which expands inward at a total angle of about 6 degrees to form a second section having a diameter of about 14 mm, wherein each head comprises:a) a substantially spherical outer diameter of about 22.
Abstract: The invention includes a process for producing a reaction bonded silicon carbide composite reinforced with coated silicon carbide fibers which is suitable for high temperature applications. The process includes the steps of coating SiC fibers with AlN, BN or TiB.sub.2 ; treating the coated fibers with a mixture of SiC powder, water and a surfactant; preparing a slurry comprising SiC powder and water; infiltrating the coated fibers with the slurry to form a cast; drying the cast to form a green body; and reaction bonding the green body to form a dense SiC fiber reinforced reaction bonded matrix composite.The invention further includes a SiC fiber reinforced SiC composite comprising a reaction bonded SiC matrix, a SiC fiber reinforcement possessing thermal stability at high temperatures and an interface coating on the fibers having chemical and mechanical compatibility with the SiC matrix and with the SiC fibers.
Type:
Grant
Filed:
February 17, 1998
Date of Patent:
August 31, 1999
Assignee:
The Carborundum Company
Inventors:
Stephen Chwastiak, Sai-Kwing Lau, Carl H. McMurtry, Gajawalli V. Srinivasan
Abstract: The invention provides a silicon carbide sputtering target comprising non-stoichiometric silicon carbide, SiC.sub.x, where x is the molar ratio of carbon to silicon and x is greater than about 1.1 but less than about 1.45. The sputtering target of this invention is superior to sputtering targets prepared from presently available non-stoichiometric silicon carbide in that the DC magnetron sputtering rate using the new sputtering target is nearly an order of magnitude higher than the rate achievable with presently available targets. The invention also includes processes for making the new sputtering target and preparing superior silicon carbide films by sputtering the target.
Abstract: The invention relates to a vertical rack for semiconductor wafer processing having strictly horizontally disposed arms wherein each arms has a rounded tip.