Abstract: A metrology system for measuring aspheric test objects by subaperture stitching. A wavefront-measuring gauge having a limited capture range of wavefront shapes collects partially overlapping subaperture measurements over the test object. A variable optical aberrator reshapes the measurement wavefront with between a limited number of the measurements to maintain the measurement wavefront within the capture range of the wavefront-measuring gauge. Various error compensators are incorporated into a stitching operation to manage residual errors associated with the use of the variable optical aberrator.

Abstract: The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.

Abstract: A system for determining the magnetic permeability of a material is provided. Two electrical inductors formed as primary and secondary concentric coils share a common magnetic core space. An AC voltage applied to the primary coil creates a magnetic flux in the core proportional to the magnetic permeability of a sample of the material positioned within the core space. The magnetic flux induces an AC voltage in the secondary coil indicative of the sample magnetic permeability. When the material is a magnetorheological fluid, the magnetic permeability is proportional to the concentration of magnetic particles in the sample and can be back-calculated from the amplitude of the secondary voltage signal. Sensitivity and resolution can be increased by using two identical sets of coils wherein a reference material forms a core for the primary set and the MR fluid sample forms a core for the secondary set.

Abstract: A method of manufacturing a chemical-mechanical polishing (CMP) pad comprises the steps of (a) forming a layer of a polymer resin liquid solution (i.e., a polymer resin dissolved in a solvent); (b) inducing a phase separation in the layer of polymer solution to produce an interpenetrating polymeric network comprising a continuous polymer-rich phase interspersed with a continuous polymer-depleted phase in which the polymer-depleted phase constitutes about 20 to about 90 percent of the combined volume of the phases; (c) solidifying the continuous polymer-rich phase to form a porous polymer sheet; (d) removing at least a portion of the polymer-depleted phase from the porous polymer sheet; and (e) forming a CMP pad therefrom.

Abstract: The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system.

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, ?-hydroxy-?-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

Abstract: An improved x-ray generation system produces a converging or diverging radiation pattern particularly suited for substantially cylindrical or spherical treatment devices. In an embodiment, the system comprises a closed or concave outer wall about a closed or concave inner wall. An electron emitter is situated on the inside surface of the outer wall, while a target film is situated on the outside surface of the inner wall. An extraction voltage at the emitter extracts electrons which are accelerated toward the inner wall by an acceleration voltage. Alternately, electron emission may be by thermonic means. Collisions of electrons with the target film causes x-ray emission, a substantial portion of which is directed through the inner wall into the space defined within. In an embodiment, the location of the emitter and target film are reversed, establishing a reflective rather than transmissive mode for convergent patterns and a transmissive mode for divergent patterns.

Abstract: The invention is directed to a polishing pad for use in chemical-mechanical polishing comprising a biodegradable polymer. The biodegradable polymer comprises a repeat unit selected from the group consisting of glycolic acid, lactic acid, hydroxyalkanoic acids, hydroxybutyric acid, hydroxyvaleric acid, caprolactone, p-dioxanone, trimethylene carbonate, butylene succinate, butylene adipate, monosaccharides, dicarboxylic acid anhydrides, enantiomers thereof, and combinations thereof. The invention is further directed to methods of its use.

Abstract: The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.

Abstract: The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.

Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

Abstract: The invention provides a chemical-mechanical polishing pad comprising a polishing layer comprising a hydrophobic region, a hydrophilic region, and an endpoint detection port. The hydrophobic region is substantially adjacent to the endpoint detection port. The hydrophobic region comprises a polymeric material having a surface energy of 34 mN/m or less and a polymeric material having a surface energy of more than 34 mN/m. The invention further provides a method of polishing a substrate comprising the use of the polishing pad.

Abstract: A chemical-mechanical polishing pad, and method of polishing a substrate using a polishing pad, comprising (a) a resilient subpad, and (b) a polymeric polishing film substantially coextensive with the resilient subpad, wherein the polymeric polishing film comprises (i) a polishing surface that is substantially free of bound abrasive particles, and (ii) a back surface releasably associated with the resilient subpad.

Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.

Abstract: The invention provides a polishing pad comprising a polymeric material having pores and a component that is disposed within the pores, as well as a method of polishing a workpiece with the aforesaid polishing pad, and a method for producing the aforesaid polishing pad.

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen.

Abstract: The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and ?-hydroxycarbonyl compounds.