Abstract: Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
Type:
Grant
Filed:
May 31, 2006
Date of Patent:
October 27, 2009
Assignee:
Corning Incorporated
Inventors:
Jeffrey Scott Cites, Kishor Purushottam Gadkaree, Richard Orr Maschmeyer