Abstract: An image sensor comprising an array of pixels 2, each pixel 2 including a pin or nip photodiode P. At least the intrinsic semiconductor layer of the photodiodes of a group of pixels is shared between those pixels and acts as a barrier to reduce edge leakage currents. A group of pixels may be a row of pixels, or may be all pixels of the array.
Type:
Grant
Filed:
May 20, 1998
Date of Patent:
April 25, 2000
Assignee:
U.S. Philips Corporation
Inventors:
Neil C. Bird, Ian D. French, Brian P. McGarvey