Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.

Abstract: The present invention provides improved methods of production of viral antigen on a culture of adherent cells bound to a microcarrier, wherein the methods provide for increased viral antigen yield per culture medium volume. The invention is also directed to a cell culture biomass of adherent cells having increased cell density and microcarrier concentration compared to the respective confluent cell culture.

Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract: The present invention provides exemplary apparatus and methods for processing substrates and for ensuring purge gases reach the substrate edge, including edges of JMF type wafers, to help prevent unwanted deposition thereon. One embodiment provides an apparatus for processing substrates which includes a chamber and a substrate support (13) disposed in the chamber. An edge ring (15) is disposed on the substrate support. The edge ring has a lip portion (30) which at least partially overhangs an upper surface (36) of the substrate support to define a gap (29) between the lip portion and the upper surface. In this manner, the edge ring is designed to form a gap which properly directs purge gases to edges of the substrate, including JMF type substrates.

Abstract: A thermally conductive medium includes a body with a first melting point and phase-changing material encapsulating a portion of the body, with the phase-changing material having a second melting point. The first melting point is greater than the second melting point, and the phase-changing material is configured to be in a liquid phase at temperatures above the second melting point and a solid phase at temperatures below the same. In the liquid phase, an adhesive force is present between the body and the phase-changing material due to capillary attraction, and the phase-changing material may be wettable to one of the two surfaces.

Abstract: An apparatus for increasing the ozone concentration in the output of an ozone-generating system is disclosed. The invention reduces the concentration of O.sup.+ ions, which would otherwise react with ozone to form diatomic oxygen, by means of an ionic filter. In one embodiment, a gas-permeable electrode within a gas conduit attached to the output of an ozonator is negatively charged to several kilovolts with respect to the distribution line. This electrode attracts the positively charged oxygen ions, removing them before they can react with the ozone. This provides a higher ozone concentration that does not vary as much with distance from the ozone generator.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract: The present invention relates to novel methods for sequencing and mapping genetic markers in polynucleotide sequences using Type-IIs restriction endonucleases. The methods herein described result in the "capturing" and determination of specific oligonucleotide sequences located adjacent to Type-IIs restriction sites. The resulting sequences are useful as effective markers for use in genetic mapping, screening and manipulation.

Abstract: The present invention is directed to a process for amplifying and detecting any target nucleic acid sequence contained in a nucleic acid or mixture thereof and for assembling large polynucleotides from component polynucleotides, each involving generating concatemers formed by PCR amplification of overlapping fragments.

Abstract: All lines have been prepared from growth suppressor gene deficient animals. The cells include immortalized precursor cells and differentiated cells such as osteoclast precursors, osteoblast precursors, megakaryocytes, osteoclasts, osteoblasts, pancreatic .alpha.-cells, pancreatic .beta.-cells, pancreatic .delta.-cells, adipocytes, macrophages, chondrocytes, dendritic cells, hepatocytes, myocytes and prostatic cells. The cells are useful for constructing cDNA and protein libraries, screening agonists and antagonists of compounds and factors that affect metabolic pathways of specific cells and generating cell-specific antibodies.