Abstract: A gas distributor for use in a semiconductor processing chamber is provided. The gas distributor comprises a gas inlet, a gas outlet, and a stem section having a spiral thread. The gas distributor further comprises a body having a gas deflecting surface that extends radially outward away from the stem section and a lower face disposed on the opposite side of the body from the gas deflecting surface, a lateral seat disposed between the spiral thread and the gas deflecting surface, and a gas passageway that extends from the gas inlet through the stem section and body to the gas outlet. In a specific embodiment, the lateral seat is adapted to hold a sealing member.

Abstract: Method and apparatus for abating F2 from by-products generated during cleaning of a processing chamber. F2 abatement is efficiently performed by directly injecting H2 in line with a foreline exiting the processing chamber. A tube which is highly resistant to oxidation and corrosive gases, even at high temperature, is connected in line with the foreline as part of the exhaust line of the processing chamber. A cooling jacket may be provided for cooling the tube, since the reaction between F2 and H2 is exothermic. A pressure monitoring arrangement may also be employed to insure that pressure within a hydrogen line, that feeds the injection of H2 into the tube, does not exceed a predetermined pressure value.

Abstract: Guide members for guiding an optical pickup for movement in directions parallel to a diameter of an optical disk relative to the optical disk are formed of a metal, support members supporting the guide members on a chassis are formed of a resin, and heat transfer members formed of a metal are set in contact with the guide members and the chassis to achieve both the dissipation of heat generated by the optical pickup and the isolation of the optical pickup from vibrations. The guide support members attenuate vibrations propagating from the chassis toward the optical pickup, and heat generated by the optical pickup is dissipated through the heat transfer members into the chassis.

Abstract: An apparatus and method for maximizing ac energy delivered to a load by minimizing energy reflected from a load, such as an RF power source coupled to a plasma load for substrate processing chambers, including a matching network, wherein the matching network couples an ac power source and load. The matching network having two transmissions lines that are inductively coupled for a fixed portion of their length, such length being at least one wavelength of the ac energy generated by the ac power source. The matching circuit providing continuously variable impedance matching through the use of fixed components.

Abstract: A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layers.

Abstract: A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.

Abstract: The present invention provides systems, methods and apparatus for heating substrates in a processing chamber to temperatures up to at least 700.degree. C. In accordance with an embodiment of the invention a heater assembly with an inner core of high thermal conductivity is encased in a shell of lower thermal conductivity, creating a nearly isothermal interface between the core and shell. The inner core is brazed to the shell, promoting thermal transfer, and acts as a thermal short between opposing surfaces of the shell. The heater assembly is designed to minimize thermal stresses arising from the difference in the thermal expansion coefficients of the various components of the multi-layered heater assembly. In one embodiment of the invention, two independently-powered heating elements are arranged concentrically to each other to create a dual zone heater.

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract: This invention relates to improved polyurea coating compositions for particluate solids, and especially for fillers which are useful in solid rocket propellants. The composition is a copolymer of a primary or secondary amine and 3-nitrazapentane diisocyanate.

Abstract: To improve a carburetor including a main housing portion (12), in which a Venturi tube (2) and a throttling part (2a) are defined and which has an air intake side and an engine exit side, and a fuel pump (5) to the effect that, on the other hand a better starting procedure is provided and, on the other hand, the carburetor and, consequently, the engine are reliably prevented from getting flooded, it is suggested to supply fuel to the fuel pump (5) via a fuel intake (8) which is connected to the fuel tank (63) through a fuel line (64), and a fuel vapor supply (or vent) line (60) is provided which with its one end (61) is connected to the fuel intake feed channel (28) and with its other end (62) is connected to the fuel tank (63), and that in the route of the fuel vapor supply line (60) a check valve (66) is provided.

Abstract: A reduction projection system (10) characterized by large numerical aperture has an unobscured optical path without the need to resort to truncated lens elements. The system includes first and second reduction stages. The first reduction stage includes a first mirror group (20) and a first lens group (30). The second reduction stage includes a second mirror group (40) and a second lens group (50). Together, the first mirror group and the first lens group form an intermediate reduced image of the object at an intermediate image region (70). The second mirror group and the second lens group form a further reduced image at an image plane (15).