Patents Represented by Attorney Tung & Asoc.

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  • Gap forming pattern fracturing method for forming optical proximity corrected masking layer
    Patent number: 7011926
    Abstract: Within a charged particle beam exposure method for forming a patterned resist layer there is employed separating at least one adjacent pair of fractured pattern elements employed in forming a contiguous latent pattern within a blanket resist layer a gap. By employing the gap, a patterned resist layer formed incident to development of the blanket resist layer is formed with enhanced pattern fidelity and enhanced critical dimension control.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: March 14, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Ren-Guey Hsieh