Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Abstract: An integrated circuit output driver is provided that exhibits improved performance and signal integrity. In one embodiment, circuitry for producing an oscillatory output signal having a peak voltage of V volts uses MOS transistor circuitry transistors of which are designed for a maximum port-to-port voltage of substantially less than V volts. A first inverter chain is coupled to an input signal to produce a predriver output signal. A second inverter chain of multiple of inverters including a first inverter produces a driver output signal. Circuitry is provided for AC-coupling the predriver output signal to the second inverter chain, it being configured to translate the predriver output signal to a higher voltage range to produce a translated predriver output signal.