Patents Represented by Attorney Useful Arts IP
  • Patent number: 8350634
    Abstract: This disclosure relates to a programmable wideband, LC Tuned, Voltage Controlled Oscillator with continuous center frequency select, and independent configuration of amplitude and tuning gain. The programmability can be via on chip non-volatile memory, or through data shifted into the part and stored via a data bus.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: January 8, 2013
    Assignee: Glacier Microelectronics
    Inventor: Thomas M. Luich
  • Patent number: 8318538
    Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: November 27, 2012
    Assignee: Elm Technology Corp.
    Inventor: Glenn J. Leedy
  • Patent number: 8288206
    Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.
    Type: Grant
    Filed: July 4, 2009
    Date of Patent: October 16, 2012
    Assignee: Elm Technology Corp
    Inventor: Glenn J. Leedy
  • Patent number: 8269327
    Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.
    Type: Grant
    Filed: June 21, 2008
    Date of Patent: September 18, 2012
    Inventor: Glenn J Leedy
  • Patent number: 8072281
    Abstract: A substantially temperature-independent LC-based oscillator is achieved using an LC tank that generates a tank oscillation at a phase substantially equal to a temperature null phase. The temperature null phase is a phase of the LC tank at which variations in frequency of an output oscillation of the LC-based oscillator with temperature changes are minimized. The LC-based oscillator further includes frequency stabilizer circuitry coupled to the LC tank to cause the LC tank to oscillate at the phase substantially equal to the temperature null phase.
    Type: Grant
    Filed: August 21, 2009
    Date of Patent: December 6, 2011
    Assignee: Si-Ware Systems Inc.
    Inventors: Bassel Hanafi, Sherif Hosny, Ayman Ahmed
  • Patent number: 7705466
    Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: April 27, 2010
    Assignee: Elm Technology Corporation
    Inventor: Glenn J Leedy