Abstract: A method of forming a semiconductor package is disclosed including disguising the test pads. Test pads are defined in the conductive pattern of the semiconductor package for allowing electrical test of the completed package. The test pads are formed in shapes such as letters or objects so that they are less recognizable as test pads.

Abstract: A LED lighting device includes a cooling lampstand, a circuit, at least one light emitting diode (LED), a sealant and a power converter. The cooling lampstand is made by a resin composition in which the thermal conductivity of the resin composition is about 1-50 W/mk. The circuit directly is disposed on the cooling lampstand. The light emitting diode (LED) is disposed on the cooling lampstand and electrically connected to the circuit. The sealant covers the LED. The power converter is electrically connected to the circuit for supplying an electrical power to the circuit.

Abstract: A take-up fastener is disclosed for fastening a level in a frame construction to the level below so as to resist upward forces generated by wind and other sources on the framed construction. The take-up fastener in general includes a take-up plate, or washer, fastened to a portion of the upper level and a take-up screw fit through the take-up plate and fastened to the adjacent level below. Once the take-up fastener is fully assembled, the take-up plate includes a pair of tabs which are capable of engaging threads on a take-up screw in a way that allows one-way motion of the take-up screw relative to the take-up plate. In particular, the take-up plate can move downward relative to the take-up screw, for example on constricting of the wooden members to which the take-up plate is affixed. However, the engagement between the take-up plate and take-up screw prevents movement of the take-up plate upward with respect to the take-up screw, for example upon an upward load due to wind or other external force.

Abstract: A storage system includes a three-dimensional memory array that has multiple layers of non-volatile storage elements grouped into blocks. Each block includes a subset of first selection circuits for selectively coupling a subset of array lines (e.g. bit lines) of a first type to respective local data lines. Each block includes a subset of second selection circuits for selectively coupling a subset of the respective local data lines to global data lines that are connected to control circuitry. To increase the performance of memory operations, the second selections circuits can change their selections independently of each other. For example, a memory operation is performed concurrently on a first non-volatile storage element of each group of a plurality of groups of non-volatile storage elements. Completion of the memory operation for the first non-volatile storage element of each group is independently detected.

Abstract: Methods for fabricating control gates in non-volatile storage are disclosed. When forming stacks for floating gate memory cells and transistor control gates, a sacrificial material may be formed at the top of the stacks. After insulation is formed between the stacks, the sacrificial material may be removed to reveal openings. In some embodiments, cutouts are then formed in regions in which control gates of transistors are to be formed. Metal is then formed in the openings, which may include the cutout regions. Therefore, floating gate memory cells having at least partially metal control gates and transistors having at least partially metal control gates may be formed in the same process. A barrier layer may be formed prior to depositing the metal in order to prevent silicidation of polysilicon in the control gates.

Abstract: Techniques are provided for determining distance to an object in a depth camera's field of view. The techniques may include raster scanning light over the object and detecting reflected light from the object. One or more distances to the object may be determined based on the reflected image. A 3D mapping of the object may be generated. The distance(s) to the object may be determined based on times-of-flight between transmitting the light from a light source in the camera to receiving the reflected image from the object. Raster scanning the light may include raster scanning a pattern into the field of view. Determining the distance(s) to the object may include determining spatial differences between a reflected image of the pattern that is received at the camera and a reference pattern.

Abstract: A process for programming non-volatile storage is able to achieve faster programming speeds and/or more accurate programming through synchronized coupling of neighboring word lines. The process for programming includes raising voltages for a set of word lines connected a group of connected non-volatile storage elements. The set of word lines include a selected word line, unselected word lines that are adjacent to the selected word line and other unselected word lines. After raising voltages for the set of word lines, the process includes raising the selected word line to a program voltage and raising the unselected word lines that are adjacent to the selected word line to one or more voltage levels concurrently with the raising the selected word line to the program voltage. The program voltage causes at least one of the non-volatile storage elements to experience programming.

Abstract: Threshold voltage distributions in a non-volatile memory device are narrowed, and/or programming time is reduced, using a programming technique in which the bit line voltage for storage elements having a target data state is stepped up, in lock step with a step up in the program voltage. The step up in the bit line voltage is performed at different times in the programming pass, for different subsets of storage elements, according to their target data state. The start and stop of the step up in the bit line voltage can be set based on a fixed program pulse number, or adaptive based on a programming progress. Variations include using a fixed bit line step, a varying bit line step, a data state-dependent bit line step, an option to not step up the bit line for one or more data states and an option to add an additional bit line bias.

Abstract: A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P?/N+ device or a P+/N?/P+ device.

Abstract: A system and method are provided for escalating a user or customer to a live agent from a conversational agent when predetermined criteria are met. The conversational agent textually converses in so-called natural language interaction and can run on a computer, such as a server. Upon receiving a first query, the conversational agent creates a new case, and interacts with the customer, in an attempt to resolve the case and satisfy the user. The predetermined criteria for escalation may include a determination that the conversational agent is unable to satisfy a computer-to-computer information request. Alternatively, the predetermined criteria may include patterns and/or words associated with frustration, for example, and/or unrecognized query subject matter, high priority queries, for example to increase sales, etc.

Abstract: Disclosed is an active sonar system capable of estimating a direction and a range of a target by using a sound pulse. A target range error can be estimated by the active sonar system, by applying a principle that a sound pulse used to detect an underwater target with consideration of a vertical structure of a sound velocity in water is reflected and refracted through a multipath not a linear path.

Abstract: A memory system includes an X line, a first Y line, a second Y line, a semiconductor region of a first type running along the X line, first switching material and a first semiconductor region of a second type between the first Y line and the semiconductor region of the first type, second switching material and a second semiconductor region of the second type between the second Y line and the semiconductor region of the first type, and control circuitry. The control circuitry is in communication with the X line, the first Y line and the second Y line. The control circuitry changes the programming state of the first switching material to a first state by causing a first current to flow from the second Y line to the first Y line through the first switching material, the second switching material, the semiconductor region of the first type, the first semiconductor region of the second type and the second semiconductor region of the second type.

Abstract: Control circuitry provides control signals to a common X line and a set of Y lines to change a first data storage element of the multiple data storage elements from a first state to a second state by passing a current into the first data storage element from a different Y line through a different storage element. The control circuitry provides control signals to the common X line and the set of Y lines to sequentially change additional data storage elements of the multiple data storage elements from the first state to the second state by passing currents into the additional data storage elements from data storage elements of the multiple data storage elements that were previously changed to the second state and their associated different Y lines.

Abstract: A system and method for online monitoring partial discharge of a generator are disclosed. The system is connected in parallel with a busbar between the generator and electric network, includes: a near-end circuit on a generator side, which includes a near-end capacitive coupling sensor connected to the busbar and a near-end impedor connected in series with the near-end capacitive coupling sensor; a far-end circuit on an electric network side, which includes a far-end capacitive coupling sensor connected to the busbar and a far-end impedor connected in series with the far-end capacitive coupling sensor; and a detection device, which has a near-end input terminal connected to a connection point between the near-end capacitive coupling sensor and the near-end impedor through a near-end cable, a far-end input terminal connected to a connection point between the far-end capacitive coupling sensor and the far-end impedor through a far-end cable, and a processing unit.

Abstract: A non-volatile storage system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of memory cells with reversible resistance-switching elements, and circuits to SET and RESET the resistance-switching elements. The circuits that RESET the resistance-switching elements provide a pulse to the memory cells that is large enough in magnitude to SET and RESET the memory cells, and long enough to potentially RESET the memory cell but not long enough to SET the memory cells.

Abstract: A system and methods for acquiring scheduled television programs with coinciding program times. One method includes initially identifying that a conflict exists to acquire the scheduled television programs. Once the conflict is identified, the method identifies one or more alternate sources that contain the scheduled television programs. Acquisition schedules are generated and optimized. Then, at least one of the scheduled television programs are recorded from one of the alternate sources. A user may set user preferences to customize how the system will generate potential acquisition schedules.

Abstract: The unintentional programming of an unselected (or inhibited) non-volatile storage element during a program operation that intends to program another non-volatile storage element is referred to as “program disturb.” A system is proposed for programming and/or reading non-volatile storage that reduces the effect of program disturb. In one embodiment, different verify levels are used for a particular word line (or other grouping of storage elements) during a programming process. In another embodiment, different compare levels are used for a particular word (or other grouping of storage elements) during a read process.

Abstract: A system and method are disclosed relating to authenticating software licenses associated with a software product. During an installation process, a purchaser of a software product may contact a vendor representative via a telephone connection and verbally relay a data packet, which may be an installation ID. The vendor server creates a reversible hash from the data packet, a known seed value and additional information relating to the software product or license. The server encrypts the hash to generate a confirmation ID, and sends the confirmation ID to the software product purchaser.

Abstract: A system and method are disclosed for tracking image and audio data over time to automatically identify a person based on a correlation of their voice with their body in a multi-user game or multimedia setting.

Abstract: A photosurface for receiving and registering light from a scene, the photosurface comprising: a first semiconductor region in which electron-hole pairs are generated responsive to light incident on the photosurface; a single, first conductive region substantially overlaying all of the first semiconductor region; at least one second semiconductor region surrounded by the first semiconductor region; a different second conductive region for each second semiconductor region that surrounds the second semiconductor region and is electrically isolated from the first conductive region; wherein when the second conductive region is electrified positive with respect to the first conductive region, electrons generated by light incident on the first semiconductor region are collected in the second semiconductor region.