Abstract: A 3-dimensional opto-electronic system employs an optical communications channel between spaced circuit substrates. The beam from an in-line laser on one substrate is deflected by a turning mirror that is monolithically integrated on the substrate along with the laser and its associated electronic circuitry, and directed to an optical detector on another substrate. The deflection is accomplished with a turning mirror that is specially fabricated with a focused ion beam (FIB) so that it focuses or collimates as well as deflects the laser beam onto the photodetector. The mirror is initially formed with a flat surface, and is thereafter processed with the FIB to produce focusing curvatures in both x and y directions. The mirror is preferably spaced away from the laser, and is illuminated over substantially the full laser height to maximize its focal length for a given reflected spot size.

Abstract: A surface-emitting laser system includes a laser that emits a vertically divergent beam generally parallel to the substrate on which it is formed, and a turning mirror in the path of the beam that extends up from the substrate to a level well above the laser height. The extended mirror area reflects a greater portion of the beam than prior planar designs, increasing the output efficiency and providing a smoother beam pattern. One fabrication method employs a masking and ion beam milling technique that uses an accumulation of redeposited material to form the additional mirror area, with a thick mask layer that is later removed guiding the redeposition. An alternate fabrication method involves epitaxial growth of an additional layer of material above the conventional laser epilayers, with the additional layer subsequently removed from the laser region but retained in the mirror region.

Abstract: A current-controlled resonant tunneling diode (RTD) having an InAs quantum well, AlGaSb barriers and InAs cladding layers is disclosed. The RTD of this invention displays an S-shaped negative differential resistance in its I-V relationship. As a result, the RTD displays the bistability necessary to greatly enhance the speed of operation of many key electronic components by eliminating the need for large load resistances in the circuit design.

Abstract: High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.

Abstract: Quantum well structures are fabricated by use of a process employing a Focused Ion Beam (FIB) scanning in the surface of a semiconductor substrate. The quantum well structures thus fabricated include Resonant Tunneling Transistors (RRTs) and one dimensional quantum wire devices, fabricated in conventional Metal Semiconductor Field Effect Transistors (MESFETs) or in High Electron Mobility Transistors (HEMTs). The RRT comprises a pair of implant barriers in the semiconductor substrate, whereby charge carriers are capable of tunneling through the implant barriers into the quantum well during the state of resonance. The one dimensional quantum wire device comprises a multiplicity of implant barriers disposed in the semiconductor substrate substantially parallel to the travelling direction of the charge carriers. The intersection of the implant barriers and the two dimensional gas (2DEG) inside the HEMT enclose truly one dimensional quantum wells which enable electrons to travel therethrough with high mobility.

Abstract: Wear-resistant titanium nitride coatings onto cast iron and other carbon-containing materials is enhanced by means of a new surface preparation and deposition process. The conventional pre-deposition surface cleaning by Ar.sup.+ ion bombardment is replaced by a hydrogen-ion bombardment process which cleans the substrate surface by chemical reaction with minimal sputtering and simultaneously removes graphite present on the cast iron surface. Removal of the graphite significantly improves the wear resistance of titanium nitride, since the presence of graphite causes initiation of wear at those sites. Hydrogen ion bombardment or electron bombardment may be used to heat the substrate to a chosen temperature. Finally, titanium nitride is deposited by reactive sputtering with simultaneous bombardment of high-flux Ar.sup.+ ions from an independently generated dense plasma.

Abstract: A passively mode-locked laser and method for generating a coherent pseudo random pulse train is disclosed. The laser comprises an optical resonant cavity that is capable of sustaining the oscillation of a plurality of resonant modes having respective phases. A saturable absorber is positioned in the resonant cavity and has an optical intensity threshold beyond which multiple mode-locked pulses with random starting times are generated in the resonant cavity and periodically emitted by the laser. A pump injects power into the resonant cavity at a level at which the optical intensity that is incident on the saturable absorber exceeds the optical intensity threshold.

Abstract: A simple, low-power feedback control loop is arranged to set the operating point of a photonic intensity modulator. The loop includes photodetectors which are respectively illuminated with a sample of the carrier signal into the modulator and the modulated signal out of the modulator. A comparison network develops an error signal which is integrated and applied to the voltage modulating port of the modulator. The comparison network includes voltage dividers for adjusting the transfer function operating point of the modulator. The control loop is especially suited for stabilizing Mach-Zehnder and directional coupler modulators.

Abstract: Post-growth annealing of GaInSb/InAs superlattices at about 400.degree. to 650.degree. C. in an antimony flux followed by cooling results in enhanced optical properties as determined by photoluminescence and in reduced background doping levels as determined by Hall measurements. Accordingly, the annealing procedure represents an advantage over previous fabrication techniques for Ga.sub.1-x In.sub.x Sb/InAs superlattices.

Abstract: A thermally insulated distributed light network employs an array of discrete, thermally insulative light guides that are spaced slightly away from a central light source and provide optical coupling to optical fibers that have a lower thermal capability. The light guides can either be solid such as quartz, focusing lenses, or a combination of the two. The light receiving ends of the light guides are preferably held by a specially designed coupler so that the guides do not diverge from each other by more than the fibers' optical acceptance angle. The light guides are shaped so that their adjacent edges touch and form an enclosure around the light source, and the fibers are provided in bundles with matching geometries. The network includes an edge-lit display panel that is illuminated by a fiber that has either internal light scattering centers in the form of reflective particles or gas bubbles, or a series of edge notches, to redirect light into the panel.

Abstract: A spectral narrowing of the output bandwidth from a laser array is obtained by feeding back to the array a portion of its emitted light, while outputting the remainder of the light emitted from the array. An optical system to accomplish this preferably includes a pair of lenses, together with a diffraction grating that can be positioned either in-line with the laser array and lenses, or in a side-arm along with one of the lenses. The lenses can be set up so that light from each laser element is fed back either to itself, or to a symmetrically located element on the opposite side of the system axis. For a multi-lobe output from the laser array, one of the lobes is used for feedback and the others as outputs, resulting in a narrowing of the output angular divergence as well as of the output bandwidth.

Abstract: A system (30) and method is provided for enumerating acyclic paths in an information processing system. The system (30) incorporates multiple processor nodes (18) or functional units interconnected by point-to-point links (20). The hardware of the information processor is represented as a mixed graph with graph nodes (32) for processors and with graph edges (34) representing communication links (20). All the useful paths from the source nodes of the data to the destination nodes of the data are determined in accordance with the system and method of the present invention. These paths are then stored as a list in a table indexed by the source and destination nodes. Thus, when the need for a interprocessor communication path arises, the table can be consulted to find a permissible path. The system (30) efficiently performs interprocessor communication routing and can be utilized in real time.

Abstract: A multi-image single passive sensor depth recovery system is disclosed to determine the depth of an object in a scene, and includes a passive imaging sensor which images radiation from an object at a sensor plane. A lens having a multiplicity of facets located on its surface nearest the object is placed in optical communication with the sensor so that each facet directs radiation from the object to sensor plane to form a corresponding image of the object thereon. The size and shape of each of the facets are selected to position each image on the sensor plane at a predetermined position thereon.

Abstract: A hybrid power transistor (40) includes a vertical PNP bipolar transistor (42) having a floating base (46). A junction-gate type field-effect transistor (FET) (62) has a lateral N-type channel (64,66) and a vertical electron injection path (54) from the channel (64,66) into the base (46) of the bipolar transistor (42). The FET channel current and thereby the electron injection current are controlled by the FET gate voltage. The injection current conductivity modulates the base (46) and thereby controls the collector current of the bipolar transistor (42). The FET (62) may have a high electron mobility transistor (HEMT), junction-gate field-effect transistor (JFET) or metal-semiconductor field-effect transistor (MESFET) structure. The FET (62) does not require a gate insulating layer, enabling fabrication of the hybrid transistor (40) in the group III-V material system.

Abstract: A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.

Abstract: An article (40), such as a piece of manufacturing tooling, is modified prior to use by treating a portion of its surface (38) to be worn so that the treated surface worn more than a preselected amount has a different appearance than the treated surface worn less than the preselected amount, using a treatment process in which the treated surface is at least as wear resistant as the untreated surface. In one approach, the surface (38) is treated by implanting ions to a preselected depth. The ions are chosen so that the substrate has a different color at depths less than the preselected depth than does the substrate at depths greater than the preselected depth. After wear, the treated surface is visually inspected for color variations that indicate wear to more than the preselected depth. The surface treatment can also be accomplished by ion implanting or ion beam mixing a previously deposited surface coating.