Abstract: A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5.times.10.sup.19 to 3.times.10.sup.20 indium atoms per cubic centimeter incorporated into the large diameter, long single crystal. The initial melt of elemental indium, gallium, and arsenic contain about 1 atom percent of indium, and inclusion of the indium permits high yield growth of crystals with desired near stoichiometric or slightly arsenic rich composition which exhibit the desired electrical characteristics.

Abstract: A charge coupled device incorporates a P+ region which may be forward biased with respect to the channel to provide PNP transistor action with the channel acting as the base region at first times and at other times the P+ region is reverse biased, permitting charge to flow in the channel undisturbed. The invention overcomes the problem of conducting charge underneath or past an electrode or region used at times for emptying charge from the channel. Also an N+ region separated by an electrode may inject or remove carriers at selected times from the channel of a CCD to provide forward scuppering of the carriers to remove KTC noise.

Abstract: A robotic system for handling components such as wire leads is disclosed. The system includes a multi-axis programmable machine, often referred to as a robot, to manipulate a chuck mechanism to acquire components such as a lead wire for example and position this wire in a desired predetermined location. Typical applications include the insertion of wires having a connector pin into a multi-pin connector.

Abstract: An ion chamber exhibiting a flat response to a wide range of incident gamma energy is provided by a high-pressure fill gas mixture of a first major constituent, low atomic number gas which exhibits a reduced gamma response at low gamma energy levels, and a second minor constituent, high atomic number gas which exhibits an increased gamma response at low gamma energy levels. The preferred fill gas mixture is nitrogen as the major constituent and xenon as the minor constituent.

Abstract: A field effect transistor is described incorporating a semiconductor layer over a layer or substrate of semi-insulating semiconductor material and a gate electrode which periodically passes through the semiconductor layer to the substrate to form a plurality of conducting bars in the semiconductor layer for transistor current and which at pinch-off confines the current interior of each conducting bar. The invention overcomes the problem of leakage current at pinch-off, thus improving the efficiency of the field effect transistor as a power amplifier.

Abstract: A phase inverter generates two signals 180.degree. out-of-phase at microwave frequencies in response to an input microwave signal incorporating a semiconductor substrate such as gallium arsenide, a transistor having a drain, source and gate electrode, an ion-implanted resistor coupled between the drain electrode and a voltage source, a second ion-implanted resistor coupled between the source electrode and ground potential, a compensation network such as a capacitor coupled between the source electrode and ground potential, and a biasing network for establishing a bias voltage on the gate electrode. The phase inverter which may be monolithic overcomes the problem of the size of quarter wavelength slot lines to generate signals with 180.degree. phase relationship.

Abstract: A non-volatile memory and method is described incorporating an array of variable threshold transistors, a row decoder, a buffer circuit positioned between the array and row decode circuitry, column decode circuitry, and a sense amplifier. The non-volatile memory overcomes the problem of high voltages in the memory array during READ operation. During READ operation the variable threshold transistors operate in the common source mode. A buffer circuit with level shift capability is described incorporating P and N channel transistors. A sense amplifier with decoupling during sensing or lock out is described incorporating P and N channel transistors.

Abstract: A fission chamber assembly for use in-core of a nuclear reactor with the fission chamber included within a small diameter tubular housing which is hermetically sealed at opposed ends. A signal cable end seal assembly is provided at one end of the tubular housing serving to hermetically seal the mineral insulated coaxial signal cable to the tubular housing. A second cable end seal assembly is included within the tubular housing between the signal cable end seal assembly and the fission chamber, with a hermetically sealed gas-filled reservoir defined between the spaced-apart cable end seal assemblies. These redundant seal assemblies provide an improved reliability detector for use in the reactor hostile environment.

Abstract: An improved feedforward cancellation amplifier is disclosed, characterized by the arrangement of an adaptive cancellation modulator for each fundamental input signal at the input of a power bank amplifier. With such an arrangement, phase and amplitude modulation for adaptive cancellation of each fundamental signal is performed in the power amplification path of the feedforward canceller. Accordingly, the harmonics produced by the modulators for each fundamental signal are cancelled in the output of the power bank amplifier and the signal levels at the input to the power bank amplifier are less than those in the input sample path of the canceller.

Abstract: A high frequency directional coupler having improved intermodulation distortion performance is disclosed. The coupler includes input, output, reflected, and incident ports, and current and voltage transformers. The current transformer includes at least one primary winding connected between the inlet and outlet ports and at least one secondary winding coupled with the primary winding and connected between the reflected port and ground. The voltage transformer includes a plurality of series-connected primary windings connected between the reflected and incident ports, and a plurality of series-connected secondary windings coupled with said voltage transformer primary windings, respectively, and connected between the input port and ground. Shunt capacitors connected with the input, output, reflected and incident ports increase the bandwidth of the coupler.

Abstract: A self-powered gamma-responsive nuclear radiation detector with an emitter electrode of a lead and calcium alloy. The alloy contains calcium in an amount of between 25 and 50 atom percent. This alloy exhibits good ductility with a melting point of at least 630.degree. C.

Abstract: A leadless integrated circuit chip carrier apparatus and method of assembly to a printed circuit board. A plurality of castellations are provided in the perimeter walls of the carrier member and solder preforms are deformably fitted in the castellations for reflow vapor phase soldering to the printed circuit board. A spacer member is disposed between the carrier member and the printed circuit board and has a thermal coefficient of expansion matched to that of the solder. The spacer includes a high thermal conductivity planar metal portion sandwiched between an adhesive epoxy layer which facilitates assembly of the carrier to the circuit board.

Abstract: A semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode and wherein the layer having the greatest energy band gap fully covers the boundaries or perimeter of the layer having a lesser energy band gap to reduce surface leakage current. Further, a semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode wherein the layer having the greatest energy band gap has spaced-apart P regions to form the anode of the heterojunction diode whereby the heterojunction diode is buried below the surface of the layer having the greatest energy band gap. The invention reduces the problem of surface and bulk leakage across heterojunction diodes.

Abstract: A power combiner has been described incorporating N transmission lines each having a quarter wavelength or multiple thereof for a frequency within a predetermined frequency range where the input of each transmission line has a resistor coupled thereto with the other ends of the resistors coupled together using inductance and capacitance to compensate for the distances between the resistors to provide a floating node which is low impedance in the predetermined frequency range. A composite amplifier is described on gallium arsenide wherein a power divider and power combiner are coupled to a plurality of MESFET's and wherein each input and output of the power combiner and power divider have a resistive load with respect to the MESFET while including a matching circuit and wherein each input of the combiner has a resistor coupled to a first floating node and each output of the divider has a resistor coupled to a second floating node.

Abstract: A method of hermetically sealing an r.f. electronic module by laser welding the perimeter of a thin, solid cover sheet over a conventional package cover. The cover sheet perimeter seats on the top surface of the package side walls and the laser weld is made between the perimeter of the weldable cover sheet and the top surface of the package side walls. This minimizes heating of the electronic package and components contained therein during sealing and possible subsequent delidding and resealing.

Abstract: A dielectric optical polarizer which is operable at high peak and average power, with greater than 95 percent transmission of the desired P polarized radiation, and also greater than 95 percent reflectance of the S polarized radiation. The polarizer comprises a radiation transmissive substrate with a first dielectric layer disposed on at least one side of the substrate. The first dielectric layer has an index of refraction higher than the substrate. A second dielectric layer of low index of refraction material is disposed atop the first dielectric layer. A third dielectric layer of the same high index of refraction material as the first layer, is disposed atop the second layer. Each of the dielectric layers is one quarter wavelength thick at the operating wavelength. The dielectric polarizer operates at a very high Brewster angle associated with the dielectric layers rather than that of the substrate.

Abstract: A complementary metal oxide semiconductor (CMOS) circuit is described incorporating Schottky barrier diodes in parallel with the source or drain of either the P or N channel transistors to reduce the minority current injected into the body at times the source or drain of either the N or P channel transistors are forward biased. The Schottky diode may be fabricated by making enlarged openings exposing both the body (substrate) and drain or source region and by using a metallization which may form an ohmic contact with the drain or source region and at the same time for a Schottky diode with the substrate. By incorporating Schottky barrier diodes parallel to the drain or source the P and N-type transistors are not current limited by the barrier height of only a Schottky diode acting as the source and at the same time minority current is not injected into the substrate or body at times the drain or source is forward biased. An input and output protection network is also described incorporating Schottky diodes.

Abstract: An electrical contact member and method of fabrication which facilitates braze connection of the electrical contact member to the conductive support stem of a vacuum interrupter structure. A high density slug of the contact material is performed. The high density slug is disposed in a powder mass of the contact material which is sintered to form the contact member. A high conductivity component is then infiltrated in the electrical contact member to produce the desired conductivity for the contact member, with the high density portion being easily brazed to a conductive support stem.

Abstract: An rf module is provided with an integral coaxial connector lead-in and alignment structure about the lead-in. The rf module is readily coupled to mating rf modules or components in modular integrated rf circuit packages. The rf module includes structure for clamping the coupled modules to a flat surface which may be a printed wiring board substrate.

Abstract: Seismic restraint means are provided for mounting an elongated, generally cylindrical nuclear radiation detector within a tubular thimble. The restraint means permits longitudinal movement of the restraint means and the radiation detector into and out of the thimble. The restraint means includes spring bias means and thimble constant means whereby the contact means engage the thimble with a constant predetermined force which minimizes seismic vibration action on the radiation detector.