Abstract: An improved microprocessor is provided having a program control unit for storing and then decoding instructions, a program address generation unit for generating addresses used to obtain instructions, an address register arithmetic unit for generating addresses for data, an arithmetic logic unit for performing operations on data, a shifter unit for shifting data in response to a predetermined instruction, a multiplier unit for performing multiplication of two input values; and a plurality of registers of which at least a portion are individually selectively associated with one or more of said units as a function of an instruction.

Abstract: A method of making an integrated circuit capacitor and/or resistor and the capacitor and/or resistor wherein the method comprises providing an electrically conductive region, preferably highly doped silicon, forming a first electrode of a capacitor, forming a layer of electrically insulating material, preferably silicon oxide, silicon nitride or a combination thereof, over the surface and forming a layer of a metal silicide, preferably titanium silicide, over the layer of electrically insulating material by forming a layer of polysilicon over the layer of electrically insulating material, forming a layer of a metal, preferably titanium, which forms an electrically conductive composition when reacted with polysilicon over the layer of polysilicon, reacting the metal with the polysilicon to form an electrically conductive layer therewith and removing any unreacted metal.

Abstract: A buck-boost switch mode regulated power supply using a burst circuit topology includes a detection circuit to sense overcurrent in the high side connected power transistor. This causes the flip flop to flip which turns off the transistor. A comparator connected to the output voltage detects when the output voltage falls below the threshold value of the comparator and sends a signal to the flip flop which is reset upon the next pulse of a pulsed reset signal. When the flip flop is reset, the high side power transistor is turned back on.

Abstract: A process is disclosed for inhibiting lateral diffusion of dopants in a semiconductive material. At least one conductivity dependent region is formed in the semiconductor, and a blocking layer is provided in overlying relation with the conductivity dependent region. Interstitial sites or vacancies are introduced into the conductivity dependent region in accordance with the diffusion mechanism of a selected dopant, and dopant is diffused into the semiconductor in a direction that is substantially transverse to the semiconductor upper surface while inhibiting with the introduced interstitial sites or vacanies lateral diffusion of the dopant into the conductivity dependent region.

Abstract: An amplifier circuit (10) is provided. Amplifier (10) has an amplifier stage (14) that is coupled to control an output stage (18). Output stage (18) includes a sourcing circuit (20) and a sinking circuit (22). Output stage (18) also includes a mirror circuit (42) that is coupled to an output of amplifier stage (14). Output stage (18) also includes a current balancing circuit (30) coupled to mirroring circuit (42) and sourcing circuit (20). Mirroring circuit (42) draws current from balancing circuit (30) in response to a first predetermined output from amplifier stage (14) such that balancing circuit (30) causes an insignificant current to flow in sourcing circuit (20). Thus amplifier (10) operates to sink current from an external load (12). Alternatively, mirroring circuit (42) may draw an insignificant current from balancing circuit (30) in response to a second predetermined output of the amplifier stage (14). This causes a significant current flow in sourcing circuit (20).