Abstract: New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.
Type:
Grant
Filed:
June 8, 1983
Date of Patent:
July 2, 1985
Assignee:
Kennecott Corporation
Inventors:
Monika O. Ten Eyck, Martin R. Kasprzyk, Richard E. Tressler
Abstract: An improved process for the preparation of solid Diels-Alder adducts of halogenated cyclopentadienes and mono- or diolefins is disclosed wherein the reactants are combined in an aqueous emulsion. The adducts are obtained in excellent yield and in an extremely fine particulate form. The new process avoids the use of organic solvents which are relatively costly, hazardous to use, and from which the adducts are usually obtained as relatively large crystals which require pulverization prior to use.