Abstract: High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
Type:
Grant
Filed:
April 20, 1988
Date of Patent:
December 19, 1989
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories
Inventors:
Wilbur D. Johnston, Jr., Robert F. Karlicek, Jr., Judith A. Long, Daniel P. Wilt
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