Abstract: This invention relates to a manufacturing method for production of visibly heterogeneous or asymmetrical sunglasses, eyeglasses or frames. The production method mass produces a product comprising a randomly selected motley assembly of asymmetrical lens frames, for example, wherein a component of the left frame is different from a component in either the left frame or the right frame and/or where the product is sunglasses, the left lens is of a different color from the right lens, for example. Further, in the method both differing aspects may occur in the manufactured product. The sunglasses made by a random selection of right and left framed lenses of different colors, for example, and/or by a random selection of right and left differently framed lenses or by a random selection of both. In the method for manufacturing parts of the frames are randomly selected from sets of randomly pre-assembled sub-assemblies.

Abstract: Household food wraps are commercially available in a standard 12" nominal width roll. The present invention provides an article of manufacture for dispensing narrower strips of food wrap. The food wrap dispenser of the present invention includes a quadrilateral carton and a roll divider for receipt of a plurality of substandard size rolls of food wrap. A method of selectively converting standard size rolls of food wrap to substandard size rolls is also disclosed.

Abstract: An on-board oil disposal and recovery system for emergency response to an oil spill comprising one or a plurality of wheeled oil disposal bladders, one or a plurality of bladder support brackets disposed about the periphery of the vessel and means to interconnect the oil transfer system of the vessel and a bladder of the system.

Abstract: A light-blocking and wind deflector device, similar to a pair of sunshades, which is adapted for use in vehicles having transparent side members, such as side glass windows or windshields. The device includes a shield in the form of a relatively stiff and generally flat sheet having sufficient opacity to serve as a light filtering medium for rear view mirrors attached to each side of the vehicle and to serve as a wind deflector. A preferred material for the sheet is a sheet of polarized plastic having a thickness of approximately 1/8 of an inch and a minimum area of about 64 square inches. A pair of shields are affixed to the side windows of a vehicle by a rectangular flange portion forming a part of each shield which portion is adapted to be inserted into the aperture into which a side window retracts, the aperture being in between the side window and the inner edge of the door.

Abstract: Instabilities in the leakage current and threshold voltage of a field effect transistor on an insulator substrate, at both room temperature and after operation at relatively high temperatures (150.degree. C), are substantially reduced by selectively doping edge regions adjacent the transverse side surfaces of the channel region of the field effect transistor, wherein the breakdown voltage of the channel-to-drain junction is substantially increased. Atoms are placed in these edge regions to provide therein a carrier concentration of at least 5 .times. 10.sup.16 atoms-cm.sup.-3 of the opposite conductivity type to that of the source and drain regions. The doped edge region extends partly across said channel region and extends fully across the side surface at the end of the source region.

Abstract: A process for forming a blind hole having an isosceles trapezoidal cross-section in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask of silicon nitride on top of silicon dioxide. A composite of sapphire, silicon dioxide and silicon nitride wherein silicon dioxide is located in between the sapphire and the silicon nitride; and the silicon nitride and silicon dioxide are congruently apertured.

Abstract: A method for fabricating a semiconductor device having a pair of laterally spaced metal contacts adjacent a source and a drain, respectively, both contacts being located on a principal surface of a monocrystalline semiconductor, the contacts being separated by a groove therebetween. An edge of each of the contacts is extended in a cantilevered fashion over the groove, and a channel for the semiconductor is located under the groove. First and second laterally spaced Schottky-barrier gates are located in the groove adjacent the channel. In the method, the two Schottky-barrier gates are formed by deposition of a wide single gate onto a principal flat surface of the groove. The wide single gate is divided lengthwise into two separate Schottky-barrier gate conducting means by removing a portion of the gate through a photolithographically defined slot in a layer of a resistant means such as a photoresist or an ion-beam resist.

Abstract: An improvement in polycrystalline silicon gate MOS integrated circuits made of silicon mesas on a sapphire substrate is provided. The improvement is an extension of a polycrystalline silicon gate onto the sapphire substrate as a single crystal layer. The single crystal layer is anisotrophically etched to slant its sidewalls. Metal contacts traversing the slanted sidewalls exhibit increased continuity and the single crystal layer exhibits improved conductivity. The polycrystalline silicon and single crystal silicon are formed simultaneously from a single source.

Abstract: An electronic device, such as a metal-oxide-semiconductor (MOS) transistor, is radiation hardened by removing impurities such as sodium and other alkali species, from the oxide. The impurities are first caused to migrate to the surface of the oxide by exposure to electromagnetic radiation having an energy greater than the oxide band gap while the oxide is immersed in an electric field. The impurities are then rinsed from the surface of the oxide with a solvent.

Abstract: An MOS mesa transistor wherein the sidewalls of the mesa are electrically isolated from a device formed on the principal surface of the mesa, is provided. The mesa is comprised of a source and a drain which do not extend to a sidewall of the mesa. The source and the drain are surrounded by a band of semiconductor material which is a portion of the mesa and which electrically isolates the source and the drain from the sidewalls of the mesa.

Abstract: A planar TRAPATT diode includes a substrate selected from an area of a silicon wafer, a diffused region within the area, a mask of an insulating layer of SiO.sub.2, and a conductive layer of polycrystalline silicon. The silicon wafer includes a doped P region adjacent to the surface thereof and a heavily doped P.sup.+ region adjacent to the P region. The TRAPATT junction is a selected area below the surface at the interface between the diffused region, which is N.sup.+, and the P region. The polycrystalline silicon layer is the dopant source for the N.sup.+ diffused region and contacts the wafer in the selected area.

Abstract: The structure is a semiconductor island with a space etched in the periphery to form two steps. The steps may be characterized as two mesas, a small mesa being located on top of a large mesa. Between the top of the small mesa and the top of the large mesa, a PN junction is located. The edge of the junction is protected by a passivation layer of relatively thick portions of glass deposited adjacent the steps.

Abstract: A microcircuit adhesion testing method and fixture for uniform placement and soldering of a preselected length of wire above a film pad on a microcircuit substrate with consistent substrate-to-wire spacing, comprising a holder for the substrate, finger spacers attached to the holder, and a member for pressing the wire against the spacers. The spacers are made of a material which is not wettable with solder of the type used to attach the wire to the film.