Abstract: The invention provides novel implementations of a latch cell in CMOS gate array technology to produce latch dissymmetry and permit a single ended data input. The dissymmetry is produced by increasing the output impedance of the second stage of the latch cell, which can be done, either in a DC or in an AC mode, or even in a mixed version of both modes.

Abstract: A transistor memory cell is disclosed of the type wherein an unclamped conducting transistor in each of a plurality of memory cells connected to a given word line is driven into saturation when storing data. The cell is equipped with controlled active devices for discharging the saturation capacitance of the conducting transistors prior to writing new data into the cells. Each active device is characterized with a forward low-impedance current direction and reverse high impedance current direction therethrough for each saturation transistor. Each active device is connected to discharge an associated saturation transistor in its forward current direction. In one embodiment, each active device discharges to a word line when the line is brought to an appropriate control potential. In another embodiment, each active device discharges to a separate discharge line not connected to the work line when the former line is brought to an appropriate control potential. The active devices may be diodes.

Abstract: A shield or opaque covering for reducing blooming at low input levels in -dimensional charge-injection devices. Two-dimensional charge-injection devices include X-Y aligned detector elements in which each detector element includes a y-electrode portion and a x-electrode portion, each in the same alignment. Each of the y-electrode portions in the same vertical column is connected to a common conductor to form separate y-electrode column conductors, one for each column of elements. Each of the x-electrode portions in the same horizontal row is connected to a common conductor thereby forming separate rows of x-electrode conductors, one for each row of elements. During fabrication each of the rows of y-electrode portions is permanently covered with a covering which is opaque to the radiation to be detected whereas each of the x-electrode areas is exposed to the radiations to be detected.

Abstract: A method for permitting the use of "drop-in" waveguide structures in micrrip applications comprising the steps of: inserting a heavily loaded waveguide that is compatible in size to the stripline into a longitudinal hole cut in the stripline to accommodate the waveguide so that these two components are end-to-end;Attaching the ground plane of the stripline directly to one of the broad-walls of the waveguide; andImpedance matching the top, narrow conductor of the stripline to the waveguide completely external to said waveguide and attaching it to the remaining waveguide broad-wall.

Abstract: A counterwound, magnetic core for a towed-cable, helically wound, ELF anta comprising a cylindrical, plastic, center insert, with or without a center conductor, with two strips or sets of strips of magnetic material counterwound about it so that a plurality of good-mechanical-contact, strip, crossover points are formed distributed around the circumference of the insert and down its length. An insulating material is then wrapped around these counterwound strips and a conductor helically wound around that. This design, by providing alternate flux paths down the core via the crossover points provides a lower, core reluctance and, when the core is under stress, provides a flux path that avoids the high-stress regions of the core thus reducing the amount of flux that is stress-modulated. Thus a substantial magnetostrictive noise reduction is obtained.

Abstract: A switching power amplifier for use in low-frequency sonar applications. s amplifier comprises a set of four switching transistors arranged in a bridge configuration for switching a power source through a highly resonant, low-frequency, underwater transducer. The signal to be amplified is taken from a signal generator, filtered, converted to voltage logic levels, delayed and modified a predetermined amount in time to prevent a power short circuit through the bridge due to slow transistor switching, and applied to a set of four voltage transformers. A different voltage transformer is coupled to each of the switching transistors in the bridge circuit. These voltage transformers are coupled to switch their respective bridge transistors only when their primary currents are collapsing, thus effectively decoupling the bridge transistors and the power source from the signal conditioner and driver delay circuitry.

Abstract: Surface acoustic waves on a piezoelectric crystal substrate beat with the bulk shear wave energy generated by the incident surface wave and which pass through the thickness of the substrate to produce a beat signal which is collected and is useful in pulse systems.

Abstract: An improved ion-laser system utilizing a cold, perforated-wall hollow-cate electron-beam discharge to produce a high energy, high intensity self-collimated electron-beam to provide a high efficiency, high power continuous wave or pulsed ion-laser oscillations in both visible and ultra-violet ranges.

Abstract: A TUNNETT (tunneling transit time) electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector.