Patents Represented by Attorney W. Y. Cheung

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  • Oxide/nitride stacked in FinFET spacer process
    Patent number: 6924178
    Abstract: In a FinFET integrated circuit, the fins are formed with a body thickness in the body area and then thickened in the source/drain area outside the body to improve conductivity. The thickening is performed with epitaxial deposition while the gates are covered by a composite gate cover layer to prevent thickening of the gates, which may short the gate to the source/drain.
    Type: Grant
    Filed: December 8, 2003
    Date of Patent: August 2, 2005
    Assignee: International Business Machines Corporation
    Inventor: Jochen C. Beintner