Abstract: An RF power amplifier module utilizing a plurality of silicon carbide transistor power amplifier circuits, each including a transistor assembly having multiple cells, respectively providing power amplification of an input signal. In a preferred embodiment of the invention, four mutually staggered silicon carbide transistor assemblies, each containing multiple transistor cells, are operated in parallel while being arranged in close proximity on a common substrate. Each silicon carbide amplifier circuit assembly is commonly driven by a fifth silicon carbide amplifier circuit. The outputs of the parallely driven silicon carbide transistor power amplifier circuits are combined so as to provide a single composite RF output signal which may be in the order of 1000 watts or more when operated at a frequency of, for example, 600 MHz.