Abstract: An etching process is described for etching aluminum containing III-V semiconductor compounds. The etch solution contains dichromate ion in acid aqueous solution in which the acid is either phosphoric acid or sulfuric acid. The etch solution is highly selective in that it etches the aluminum containing III-V semiconductor compounds without etching significantly other III-V semiconductor compounds not containing aluminum exposed to the same etching solution. the etching process is extremely useful in fabricating a variety of III-V semiconductor devices including heterojunction bipolar transistors, heterojunction field effect transistors and self-enhanced electro optic devices.

Abstract: Processes are described for electroplating metal or alloy on superconducting oxides using either a nonaqueous bath or aqueous bath with suitably applied potential. Articles made in accordance with the electroplating process are also described.

Abstract: A polyquinoxaline polymer is prepared by self condensation of a monomer having both a 1,2-diketone and a 1,2-primary diamine in the molecule. The resultant polymers can be used as dielectric films, adhesions, varnishes and membranes.

Abstract: A process for electroplating palladium containing deposits from baths comprising a combination of a surfactant and a brightener combination. The surfactant is an alkyl, ammonium-type salt containing 4 to 35 carbon atoms. The brightener is 0-benzaldehydesulfonic acid, 1-naphthalene sulfonic acid, 2-naphthalenesulfonic acid, benzenesulfinic acid, oxy-4,4-bis (benzene) sulfinic acid, p-toluene sulfinic acid, 3-trifluoromethyl benzene sulfinic acid, allyl phenyl sulfone, 0-benzoic sulfamide, benzylsulfonyl propionamide, phenylsulfonyl acetamide, 3-(phenylsulfonyl) propionamide, benzene sulfonamide, bis (phenylsulfonyl) methane, guanidine carbonate, sulfaguanidine or nicotinic acid. This combination provides deposits having superior adhesion and ductility.

Abstract: A process is described for electroplating palladium and palladium alloys. The process involves the use of an alkyl hydroxyamine as complexing agent and is particularly good for palladium alloys such as palladium-nickel and palladium-cobalt.

Abstract: Certain yttrium orthosillicate phosphors doped with various rare-earths are particularly suitable for use in various display devices including cathode ray tubes. Included are single crystal phosphors which exhibit high brightness and long life under high energy excitation and conventional powder phosphors with great sensitivity.

Abstract: A process of making a lithium cell with a positive electrode that comprises a niobium chalcogenide (e.g., NbSe.sub.3) active material. The process comprises forming the active material by a procedure that comprises forming a layer of Nb powder on an inert substrate (e.g., an alumina plate), and reacting the powder with selenium or sulfur vapor such that the desired (fibrous) chalcogenide is formed. The powder layer typically is formed by depositing (e.g., by spraying) a layer of slurry on the substrate, with the slurry comprising a liquid such as propylene glycol and Nb powder, and removing the liquid from the deposited slurry. The resulting layer of Nb powder can be of uniform thickness, advantageously is less than 0.1 mm thick, and adheres relatively well to the substrate. In preferred embodiments reacting the Nb powder with Se vapor comprises a two-stage heat treatment, the first stage comprising maintaining the powder in contact with Se vapor for at least four hours at a temperature in the range 520.

Abstract: An electrical device is provided which has contacts having regions with a conductive matte-finish metal surface. The matte-finish surface is characterized by having a Knoop hardness number of at least 300, a diffuse reflectance of less than about 20 percent, and a specular reflectance of less than about 2 percent. These contacts have a contact resistance of less than about 50 milliohms, under a 50-gram load, even after exposure to 50.degree. C. and 95% relative humidity for a period of 20 days. Reflection electron microscopy shows that particularly advantageous matte-finish surfaces have sharply peaked asperities with average peak angles of less than about 90 degrees. In one embodiment, the surface is formed of hardened nickel electroplated from an electrolytic bath with a pH above about 7.0.

Abstract: Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a moleuclar beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.

Abstract: Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a molecular beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.

Abstract: The invention is a controlled laser having an optical resonator, a laser gain medium placed inside the optical resonator, the laser gain medium being capable of emitting light and of lasing with the light, a multiple layer heterostructure placed inside the optical resonator, and means for varying an optical absorption of the multiple layer heterostructure for the light in order to control an optical gain of the optical resonator, and thereby control lasing of the laser gain medium. Passive mode locking is achieved by the light emitted by the gain medium controlling the optical absorption of the multiple layer heterostructure. Active mode locking and modulation are achieved by controlling the optical absorption of the multiple layer heterostructure by applying an electric field to the multiple layer heterostructure.

Abstract: Processes are described in which solution composition is monitored by extremely accurate measurements of index of refraction involving measurement of reflectivity from a glass-solution interface. A particularly useful application is the swelling operation in metallizing polymer surfaces where dimethylformamate-water solution is contacted with the polymer surface to produce the swelling. Accurate, continuous control of the solution composition is necessary to insure optimum amount of swelling.

Abstract: Light output of single crystal phosphors used on cathode ray tubes can be vastly improved by use of a microfaceted surface structure conveniently produced by use of a single crystal epitaxial layer with lattice constant slightly larger than the single crystal substrate. Such epitaxial layers are conveniently grown using substituents that increase the lattice constant compared to the single crystal substrate.

Abstract: Junction field effect transistors are described with unusually short gates and a self-aligned structure which permits close approach of the source and drain electrodes to the p-n junction. Such devices have high speed, high gain and are usefully combined with other field effect transistors in integrated circuits.

Abstract: Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

Abstract: A deep-UV step-and-repeat photolithography system includes a narrow-bandwidth pulsed excimer laser illumination source and an all-fused-silica lens assembly. The system is capable of line definition at the 0.5-micrometer level. One significant feature of the system is its ability to perform wafer focus tracking by simply changing the frequency of the laser.

Abstract: A nonaqueous, lithium cell is described which exhibits excellent safety characteristics when exposed to abusive testing, as well as high energy density, good charge and discharge rates, and long recycle life. Particularly unique is the composition of the electrolyte which contains such substances as ethylene carbonate, propylene carbonate and one or more polyethylene glycol dialkyl ethers.

Abstract: Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.

Abstract: Various integrated device structures are described which incorporate novel substrate materials and channel confinement schemes. For example, devices are described for p-type substrates and novel buffer layers. Such substrates are easier to grow and provide good isolation and low-trap density at the interface between substrate and buffer layer.

Abstract: Lithium nonaqueous rechargeable batteries are described in which the separators in the cells have been exposed to a radiation grafting process to increase wettability. This increases charging and discharging rates without use of a wetting agent or addition of undesirable substances to the electrolyte system. In a preferred embodiment, a particularly advantageous electrolyte solvent system (propylene carbonate and ethylene carbonate) is used with excellent charge and discharge rates and excellent cycle life.