Patents Represented by Attorney Walter G. Nilsen
  • Patent number: 4923564
    Abstract: An etching process is described for etching aluminum containing III-V semiconductor compounds. The etch solution contains dichromate ion in acid aqueous solution in which the acid is either phosphoric acid or sulfuric acid. The etch solution is highly selective in that it etches the aluminum containing III-V semiconductor compounds without etching significantly other III-V semiconductor compounds not containing aluminum exposed to the same etching solution. the etching process is extremely useful in fabricating a variety of III-V semiconductor devices including heterojunction bipolar transistors, heterojunction field effect transistors and self-enhanced electro optic devices.
    Type: Grant
    Filed: August 24, 1989
    Date of Patent: May 8, 1990
    Assignee: American Telephone and Telegraph Company
    Inventors: Jaya Bilakanti, Edward J. Laskowski
  • Patent number: 4914081
    Abstract: Processes are described for electroplating metal or alloy on superconducting oxides using either a nonaqueous bath or aqueous bath with suitably applied potential. Articles made in accordance with the electroplating process are also described.
    Type: Grant
    Filed: January 15, 1988
    Date of Patent: April 3, 1990
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Barry Miller, Joseph M. Rosamilia
  • Patent number: 4914177
    Abstract: A polyquinoxaline polymer is prepared by self condensation of a monomer having both a 1,2-diketone and a 1,2-primary diamine in the molecule. The resultant polymers can be used as dielectric films, adhesions, varnishes and membranes.
    Type: Grant
    Filed: July 13, 1987
    Date of Patent: April 3, 1990
    Assignee: American Telephone and Telegraph Company
    Inventor: Treliant Fang
  • Patent number: 4911798
    Abstract: A process is described for electroplating palladium and palladium alloys. The process involves the use of an alkyl hydroxyamine as complexing agent and is particularly good for palladium alloys such as palladium-nickel and palladium-cobalt.
    Type: Grant
    Filed: December 20, 1988
    Date of Patent: March 27, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: Joseph A. Abys, Virginia T. Eckert, Catherine Wolowodiuk
  • Patent number: 4911799
    Abstract: A process for electroplating palladium containing deposits from baths comprising a combination of a surfactant and a brightener combination. The surfactant is an alkyl, ammonium-type salt containing 4 to 35 carbon atoms. The brightener is 0-benzaldehydesulfonic acid, 1-naphthalene sulfonic acid, 2-naphthalenesulfonic acid, benzenesulfinic acid, oxy-4,4-bis (benzene) sulfinic acid, p-toluene sulfinic acid, 3-trifluoromethyl benzene sulfinic acid, allyl phenyl sulfone, 0-benzoic sulfamide, benzylsulfonyl propionamide, phenylsulfonyl acetamide, 3-(phenylsulfonyl) propionamide, benzene sulfonamide, bis (phenylsulfonyl) methane, guanidine carbonate, sulfaguanidine or nicotinic acid. This combination provides deposits having superior adhesion and ductility.
    Type: Grant
    Filed: August 29, 1989
    Date of Patent: March 27, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: Joseph A. Abys, Vijay Chinchankar, Virginia T. Eckert, Igor V. Kadija, Edward J. Kudrak, Jr., Joseph J. Maisano, Jr., Heinrich K. Straschil
  • Patent number: 4894583
    Abstract: Certain yttrium orthosillicate phosphors doped with various rare-earths are particularly suitable for use in various display devices including cathode ray tubes. Included are single crystal phosphors which exhibit high brightness and long life under high energy excitation and conventional powder phosphors with great sensitivity.
    Type: Grant
    Filed: September 2, 1988
    Date of Patent: January 16, 1990
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: George W. Berkstresser, Charles D. Brandle, Jr., Joseph Shmulovich, Alejandro J. Valentino
  • Patent number: 4892795
    Abstract: A process of making a lithium cell with a positive electrode that comprises a niobium chalcogenide (e.g., NbSe.sub.3) active material. The process comprises forming the active material by a procedure that comprises forming a layer of Nb powder on an inert substrate (e.g., an alumina plate), and reacting the powder with selenium or sulfur vapor such that the desired (fibrous) chalcogenide is formed. The powder layer typically is formed by depositing (e.g., by spraying) a layer of slurry on the substrate, with the slurry comprising a liquid such as propylene glycol and Nb powder, and removing the liquid from the deposited slurry. The resulting layer of Nb powder can be of uniform thickness, advantageously is less than 0.1 mm thick, and adheres relatively well to the substrate. In preferred embodiments reacting the Nb powder with Se vapor comprises a two-stage heat treatment, the first stage comprising maintaining the powder in contact with Se vapor for at least four hours at a temperature in the range 520.
    Type: Grant
    Filed: September 14, 1988
    Date of Patent: January 9, 1990
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Wei-Chou Fang, Brijesh Vyas
  • Patent number: 4891480
    Abstract: An electrical device is provided which has contacts having regions with a conductive matte-finish metal surface. The matte-finish surface is characterized by having a Knoop hardness number of at least 300, a diffuse reflectance of less than about 20 percent, and a specular reflectance of less than about 2 percent. These contacts have a contact resistance of less than about 50 milliohms, under a 50-gram load, even after exposure to 50.degree. C. and 95% relative humidity for a period of 20 days. Reflection electron microscopy shows that particularly advantageous matte-finish surfaces have sharply peaked asperities with average peak angles of less than about 90 degrees. In one embodiment, the surface is formed of hardened nickel electroplated from an electrolytic bath with a pH above about 7.0.
    Type: Grant
    Filed: February 1, 1989
    Date of Patent: January 2, 1990
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Clarence A. Holden, Jr., Henry H. Law
  • Patent number: 4878956
    Abstract: Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a moleuclar beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.
    Type: Grant
    Filed: March 9, 1989
    Date of Patent: November 7, 1989
    Assignee: American Telephone & Telegraph Company AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Charles W. Tu
  • Patent number: 4870032
    Abstract: Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a molecular beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.
    Type: Grant
    Filed: March 24, 1987
    Date of Patent: September 26, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Wilbur D. Johnston, Jr., Charles W. Tu
  • Patent number: 4860296
    Abstract: The invention is a controlled laser having an optical resonator, a laser gain medium placed inside the optical resonator, the laser gain medium being capable of emitting light and of lasing with the light, a multiple layer heterostructure placed inside the optical resonator, and means for varying an optical absorption of the multiple layer heterostructure for the light in order to control an optical gain of the optical resonator, and thereby control lasing of the laser gain medium. Passive mode locking is achieved by the light emitted by the gain medium controlling the optical absorption of the multiple layer heterostructure. Active mode locking and modulation are achieved by controlling the optical absorption of the multiple layer heterostructure by applying an electric field to the multiple layer heterostructure.
    Type: Grant
    Filed: May 14, 1987
    Date of Patent: August 22, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Daniel S. Chemla, David A. B. Miller, Peter W. Smith
  • Patent number: 4844608
    Abstract: Processes are described in which solution composition is monitored by extremely accurate measurements of index of refraction involving measurement of reflectivity from a glass-solution interface. A particularly useful application is the swelling operation in metallizing polymer surfaces where dimethylformamate-water solution is contacted with the polymer surface to produce the swelling. Accurate, continuous control of the solution composition is necessary to insure optimum amount of swelling.
    Type: Grant
    Filed: March 23, 1987
    Date of Patent: July 4, 1989
    Assignee: American Telephone and Telegraph Company AT&T Bell Laboratories
    Inventor: Craig G. Smith
  • Patent number: 4835437
    Abstract: Light output of single crystal phosphors used on cathode ray tubes can be vastly improved by use of a microfaceted surface structure conveniently produced by use of a single crystal epitaxial layer with lattice constant slightly larger than the single crystal substrate. Such epitaxial layers are conveniently grown using substituents that increase the lattice constant compared to the single crystal substrate.
    Type: Grant
    Filed: May 16, 1988
    Date of Patent: May 30, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: George W. Berkstresser, Charles D. Brandle, Jr.
  • Patent number: 4829347
    Abstract: Junction field effect transistors are described with unusually short gates and a self-aligned structure which permits close approach of the source and drain electrodes to the p-n junction. Such devices have high speed, high gain and are usefully combined with other field effect transistors in integrated circuits.
    Type: Grant
    Filed: August 22, 1988
    Date of Patent: May 9, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Chu-Liang Cheng, Julian Cheng, Stephen R. Forrest
  • Patent number: 4819039
    Abstract: Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.
    Type: Grant
    Filed: December 22, 1986
    Date of Patent: April 4, 1989
    Assignee: American Telephone and Telegraph Co. AT&T Laboratories
    Inventors: Gou-Chung Chi, Shobha Sing, LeGrand G. Van Uitert, George J. Zydzik
  • Patent number: 4773750
    Abstract: A deep-UV step-and-repeat photolithography system includes a narrow-bandwidth pulsed excimer laser illumination source and an all-fused-silica lens assembly. The system is capable of line definition at the 0.5-micrometer level. One significant feature of the system is its ability to perform wafer focus tracking by simply changing the frequency of the laser.
    Type: Grant
    Filed: December 12, 1986
    Date of Patent: September 27, 1988
    Inventor: John H. Bruning
  • Patent number: 4753859
    Abstract: A nonaqueous, lithium cell is described which exhibits excellent safety characteristics when exposed to abusive testing, as well as high energy density, good charge and discharge rates, and long recycle life. Particularly unique is the composition of the electrolyte which contains such substances as ethylene carbonate, propylene carbonate and one or more polyethylene glycol dialkyl ethers.
    Type: Grant
    Filed: October 13, 1987
    Date of Patent: June 28, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Laboratories
    Inventors: Laura E. Brand, Ignacio Chi, Shelie M. Granstaff, Jr., Brijesh Vyas
  • Patent number: 4745446
    Abstract: Various integrated device structures are described which incorporate novel substrate materials and channel confinement schemes. For example, devices are described for p-type substrates and novel buffer layers. Such substrates are easier to grow and provide good isolation and low-trap density at the interface between substrate and buffer layer.
    Type: Grant
    Filed: June 10, 1987
    Date of Patent: May 17, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Julian Cheng, Stephen R. Forrest
  • Patent number: 4745447
    Abstract: Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.
    Type: Grant
    Filed: June 14, 1985
    Date of Patent: May 17, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Chung Y. Chen, Alfred Y. Cho, Sung-Nee G. Chu
  • Patent number: 4740430
    Abstract: Certain magnetic alloys are useful for a variety of applications including for magneto-optic memory storage media (optical disks). These magnetic alloys are difficult to protect against composition alteration through such processes as corrosion, oxidation, diffusion, etc. The invention is a multiple-layer structure which protects the magnetic alloys against diffusion as well as corrosion and oxidation without affecting performance of the magnetic alloy in the optical disk. Such magnetic memory storage devices exhibit high bit density and long life. They are erasable and inexpensive and highly advantageous for use in high-bit memory storage devices.
    Type: Grant
    Filed: February 18, 1987
    Date of Patent: April 26, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Robert P. Frankenthal, Robert B. vanDover