Abstract: A nonvolatile memory system is described. The system includes ferroelectric memory cells each comprising a pair of metal plates and a ferroelectric material therebetween. Data are stored in the cells by applying an electric field corresponding to the desired data value across a given cell, thereby setting the polarity of the ferroelectric material to a given state. A datum is read from a cell by a mechanical force to the ferroelectric material and sensing charge induced on one of the cells.
Type:
Grant
Filed:
November 17, 1999
Date of Patent:
May 23, 2000
Assignee:
International Business Machines Corporation
Inventors:
Ferenc Miklos Bozso, Philip George Emma