Abstract: The invention encompasses a transistor device comprising a region of a semiconductor material, and a transistor gate over a portion of the region. The device comprises a pair of opposing sidewall spacers adjacent sidewalls of the transistor gate and a pair of opposing first conductivity type source/drain regions within the semiconductor material proximate the transistor gate. The entirety of the semiconductor material under one of the sidewall spacers being defined as a first segment, and the entirety of the semiconductor material which is under the other of the sidewall spacers being defined as a second segment. The first and second segments of the semiconductor material are separated from the first and second source/drain regions by first and second gap regions, respectively, of the semiconductor material. The device further comprises a pair of opposing second conductivity type halo regions within the first and second gap regions.