Patents Represented by Attorney, Agent or Law Firm Wells, St. John, Roberts, Gregory & Matkin
  • Patent number: 6774685
    Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
    Type: Grant
    Filed: April 3, 2000
    Date of Patent: August 10, 2004
    Assignee: Micron Technology, Inc.
    Inventors: James E. O'Toole, John R. Tuttle, Mark E. Tuttle, Tyler Lowrey, Kevin M. Devereaux, George E. Pax, Brian P. Higgins, David K. Ovard, Shu-Sun Yu, Robert R. Rotzoll
  • Patent number: 6772085
    Abstract: A measuring instrument includes a first temperature sensor, a second temperature sensor and circuitry. The first and second temperature sensors each generate a signal indicative of the temperature of a medium being detected. The circuitry is configured to activate verification of temperature being sensed with the first sensor. According to one construction, the first temperature sensor comprises at least one thermocouple temperature sensor and the second temperature sensor comprises an optical temperature sensor, each sensor measuring temperature over the same range of temperature, but using a different physical phenomena. Also according to one construction, the circuitry comprises a computer configured to detect failure of one of the thermocouples by comparing temperature of the optical temperature sensor with each of the thermocouple temperature sensors. Even further, an output control signal is generated via a fuzzy inference machine and control apparatus.
    Type: Grant
    Filed: September 13, 2002
    Date of Patent: August 3, 2004
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Arthur D. Watkins, Collins P. Cannon, Charles R. Tolle
  • Patent number: 6689234
    Abstract: The invention includes a method of producing a hard metallic material by forming a mixture containing at least 55% iron and at least one of B, C, Si and P. The mixture is formed into an alloy and cooled to form a metallic material having a hardness greater than about 9.2 GPa. The invention includes a method of forming a wire by combining a metal strip and a powder. The strip and the powder are rolled to form a wire containing at least 55% iron and from 2-7 additional elements including at least one of C, Si and B. The invention also includes a method of forming a hardened surface on a substrate by processing a solid mass to form a powder, applying the powder to a surface to form a layer containing metallic glass, and converting the glass to a crystalline material having a nanocrystalline grain size.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: February 10, 2004
    Assignee: Bechtel BWXT Idaho, LLC
    Inventor: Daniel J. Branagan
  • Patent number: 6681872
    Abstract: An in situ reactor for use in a geological strata, is described and which includes a liner defining a centrally disposed passageway and which is placed in a borehole formed in the geological strata; and a sampling conduit is received within the passageway defined by the liner and which receives a geological specimen which is derived from the geological strata, and wherein the sampling conduit is in fluid communication with the passageway defined by the liner.
    Type: Grant
    Filed: June 5, 2002
    Date of Patent: January 27, 2004
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Corey William Radtke, David Bradley Blackwelder
  • Patent number: 6466634
    Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
    Type: Grant
    Filed: September 28, 1998
    Date of Patent: October 15, 2002
    Assignee: Micron Technology, Inc.
    Inventors: James E. O'Toole, John R. Tuttle, Mark E. Tuttle, Tyler Lowrey, Kevin M. Devereaux, George E. Pax, Brian P. Higgins, David K. Ovard, Shu-Sun Yu, Robert R. Rotzoll
  • Patent number: 6459726
    Abstract: The present invention provides backscatter interrogators, communication systems and backscatter communication methods. According to one aspect of the present invention, a backscatter interrogator includes a data path configured to communicate a data signal; a signal generator configured to generate a carrier signal; and a modulator coupled with the data path and the signal generator, the modulator being configured to spread the data signal to define a spread data signal and amplitude modulate the carrier signal using the spread data signal, the modulator being further configured to phase modulate the carrier signal.
    Type: Grant
    Filed: April 24, 1998
    Date of Patent: October 1, 2002
    Assignee: Micron Technology, Inc.
    Inventors: David K. Ovard, Roy Greeff
  • Patent number: 6452191
    Abstract: A multiple cell radiation detector includes a central cell having a first cylindrical wall providing a stopping power less than an upper threshold; an anode wire suspended along a cylindrical axis of the central cell; a second cell having a second cylindrical wall providing a stopping power greater than a lower threshold, the second cylindrical wall being mounted coaxially outside of the first cylindrical wall; a first end cap forming a gas-tight seal at first ends of the first and second cylindrical walls; a second end cap forming a gas-tight seal at second ends of the first and second cylindrical walls; and a first group of anode wires suspended between the first and second cylindrical walls.
    Type: Grant
    Filed: September 30, 1999
    Date of Patent: September 17, 2002
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Larry O. Johnson, Charles V. McIsaac, Robert S. Lawrence, Ervin G. Grafwallner
  • Patent number: 6431367
    Abstract: The invention provides a method for exchanging a plurality of sifter frames of a plan sifter. The steps of the method include a step, when taking out a number of sifter frames from a sifting chamber, of taking out a plurality of sifter frames in a unitary state with the unitary state being maintained to the outside of the machine frame, and a step, when accommodating new sifter frames in the sifting chamber, of stacking the sifter frames outside the machine frame and accommodating the unitary formed sifter frames in the sifting chamber. According to the method of the invention, the sifter frame exchange operation can be carried out in such a way as to reduce heavy labor and risk to workers, and such exchanging operation can be carried out in an easy manner.
    Type: Grant
    Filed: October 3, 2000
    Date of Patent: August 13, 2002
    Assignee: Satake Corporation
    Inventors: Satoru Satake, Hideki Sakaki, Akira Orihashi
  • Patent number: 6406954
    Abstract: In one aspect, the invention includes a semiconductor processing method of diffusing dopant into both n-type and p-type doped regions of a semiconductive substrate. A semiconductive material is provided. The semiconductive material has a first portion and a second portion. The first portion is a p-type doped portion and the second portion is an n-type doped portion. A mask material is formed over the p-type and n-type doped portions. A first opening is formed to extend through the mask material and to the n-type doped portion. A second opening is formed to extend through the mask material and to the p-type doped portion. Conductively doped polysilicon is formed within the first and second openings. Dopant is out-diffused from the conductively-doped polysilicon and into the n-type and p-type doped portions. In another aspect, the invention includes methods of forming CMOS constructions. In yet another aspect, the invention encompasses methods of forming DRAM constructions.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: June 18, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Shubneesh Batra, Luan C. Tran, Tyler A. Lowrey
  • Patent number: 6405588
    Abstract: The present invention relates to a monitoring well which includes an enclosure defining a cavity and a water reservoir enclosed within the cavity and wherein the reservoir has an inlet and an outlet. The monitoring well further includes a porous housing borne by the enclosure and which defines a fluid chamber which is oriented in fluid communication with the outlet of the reservoir, and wherein the porous housing is positioned in an earthen soil location below-grade. A geophysical monitoring device is provided and mounted in sensing relation relative to the fluid chamber of the porous housing; and a coupler is selectively moveable relative to the outlet of reservoir to couple the porous housing and water reservoir in fluid communication. An actuator is coupled in force transmitting relation relative to the coupler to selectively position the coupler in a location to allow fluid communication between the reservoir and the fluid chamber defined by the porous housing.
    Type: Grant
    Filed: November 5, 2000
    Date of Patent: June 18, 2002
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Joel M. Hubbell, James B. Sisson
  • Patent number: 6395128
    Abstract: Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: May 28, 2002
    Assignees: Micron Technology, Inc., Applied Materials, Inc.
    Inventors: Sujit Sharan, Gurtej S. Sandhu, Paul Smith, Mei Chang
  • Patent number: 6385857
    Abstract: Position detectors, welding system position detectors, methods of detecting various positions, and methods of providing position detectors are described. In one embodiment, a welding system positional detector includes a base that is configured to engage and be moved along a curved surface of a welding work piece. At least one position detection apparatus is provided and is connected with the base and configured to measure angular position of the detector relative to a reference vector. In another embodiment, a welding system positional detector includes a weld head and at least one inclinometer mounted on the weld head. The one inclinometer is configured to develop positional data relative to a reference vector and the position of the weld head on a non-planar weldable work piece.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: May 14, 2002
    Assignee: Bechtel BWXT Idaho LLC.
    Inventors: David M. Weinberg, L. Dean Harding, Eric D. Larsen
  • Patent number: 6387556
    Abstract: Fuel cell power systems and methods of controlling a fuel cell power system are provided. According to one aspect, a fuel cell power system includes a plurality of fuel cells electrically coupled with plural terminals and individually configured to convert chemical energy into electricity; and a digital control system configured to at least one of control and monitor an operation of the fuel cells. Another aspect provides a method of controlling a fuel cell power system including providing a plurality of fuel cells individually configured to convert chemical energy into electricity; electrically coupling the plurality of fuel cells; providing a first terminal coupled with the fuel cells; providing a second terminal coupled with the fuel cells; and coupling a digital control system with the fuel cells to at least one of monitor and control an operation of the fuel cells.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: May 14, 2002
    Assignee: Avista Laboratories, Inc.
    Inventors: William A. Fuglevand, Shiblihanna I. Bayyuk, Greg Lloyd, Peter D. Devries, David R. Lott, John P. Scartozzi
  • Patent number: 6384648
    Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
    Type: Grant
    Filed: April 14, 2000
    Date of Patent: May 7, 2002
    Assignee: Micron Technology, Inc.
    Inventors: James E. O'Toole, John R. Tuttle, Mark E. Tuttle, Tyler Lowrey, Kevin M. Devereaux, George E. Pax, Brian P. Higgins, David K. Ovard, Shu-Sun Yu, Robert R. Rotzoll
  • Patent number: 6383696
    Abstract: Methods of forming face plate assemblies are described. In one implementation, a substrate is patterned with photoresist and a first phosphor-comprising material is formed over first surface areas of the substrate. The photoresist is stripped leaving some of the first phosphor-comprising material over substrate areas other than the first areas. Photoresist is again formed over the substrate and processed to expose second substrate areas which are different from the first substrate areas. In a preferred aspect, processing the photoresist comprises using a heated aqueous developing solution comprising an acid, e.g. lactic acid, effective to dislodge and remove first phosphor-comprising material from beneath the developed photoresist. A second phosphor-comprising material is formed over the substrate and the exposed second areas, with trace deposits being left over other substrate areas.
    Type: Grant
    Filed: February 12, 2001
    Date of Patent: May 7, 2002
    Assignee: Micron Technology, Inc.
    Inventor: Jefferson O. Nemelka
  • Patent number: 6382129
    Abstract: A semiconductor wafer processor includes a chamber having a wafer support. A magnetic field generator is configured to generate a magnetic field within the chamber at a location proximate a surface of a wafer received by the wafer support. The magnetic field generator comprises a plurality of conductors within the chamber proximate the support which radiate outwardly from a substantially common origin to a periphery. The origin and periphery can be in the same or multiple planes. In one embodiment, the magnetic field generator includes a first plurality of conductors radiating outwardly from a first origin to a first periphery, and a second plurality of conductors annularly radiating outwardly from an annular second origin to an annular second periphery. The first periphery is received at least partially within the second annular periphery. The generator can be utilized apart from a semiconductor wafer processor, such as for example in an electric motor or plasma generating apparatus.
    Type: Grant
    Filed: October 3, 2000
    Date of Patent: May 7, 2002
    Assignee: Applied Materials, Inc.
    Inventor: Serge L. Nikulin
  • Patent number: 6379991
    Abstract: The invention includes a semiconductor processing method of forming a die package. An insulative substrate is provided. Circuitry is over a topside of the substrate, and a slit extends through the substrate. A semiconductive-material-comprising die is provided beneath the substrate, and has a surface exposed through the slit in the substrate. The die has an edge. There is a gap between the die and an underside of the substrate. A radiation-curable material is injected through this slit and into the gap. Radiation is directed from over the edge to the gap to cure at least a portion of the radiation-curable material within the gap and thus form a dam which impedes non-cured radiation-curable material from flowing beyond the edge.
    Type: Grant
    Filed: July 26, 1999
    Date of Patent: April 30, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Ford B. Grigg, Joseph M. Brand
  • Patent number: 6376281
    Abstract: The invention encompasses PVD target/backing plate assemblies which include a PVD target having a surface, and a bonding layer on the surface. The bonding layer has a different composition than the target surface, and a backing plate is provided to be separated from the PVD target surface by at least the bonding layer. The bonding layer forms a strong diffusion bond to the target. The invention also includes methods of forming PVD target/backing plate assemblies. Additionally, the invention includes assemblies in which one or more of titanium, zirconium, and copper is incorporated into a bonding layer between a target and a backing plate in a physical vapor deposition target/backing assembly.
    Type: Grant
    Filed: October 27, 2000
    Date of Patent: April 23, 2002
    Assignee: Honeywell International, Inc.
    Inventors: Ron D. Kohler, Matthew S. Cooper
  • Patent number: 6372601
    Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.
    Type: Grant
    Filed: September 3, 1998
    Date of Patent: April 16, 2002
    Assignee: Micron Technology, Inc.
    Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
  • Patent number: PP12571
    Abstract: A new and distinctive variety of nectarine tree denominated varietally as ‘Burnecthree’, and which is characterized as to novelty by a date of maturity for commercial harvesting and shipment of approximately July 8 to July 15, under the ecological conditions prevailing in the San Joaquin Valley of central California.
    Type: Grant
    Filed: January 18, 2000
    Date of Patent: April 23, 2002
    Assignee: The Burchell Nursery, Inc.
    Inventors: John K. Slaughter, Timothy J. Gerdts