Abstract: A transformer element 1 is formed on a semiconductor substrate using first and second wiring layers arranged parallel to each other in a vertical direction, and includes a first inductor 2 and a second inductor 3. The first and second inductors 2 and 3 are each provided using the first and second wiring layers such that if projected into one of the first and second wiring layers either along a vertical upward direction or a vertical downward direction, outlines of a projection form a symmetrical shape with respect to a predetermined reference plane, and portions corresponding to intersections between the outlines of the projection on the wiring layer are formed so as to be out of contact with each other.
Type:
Grant
Filed:
May 12, 2004
Date of Patent:
August 9, 2005
Assignee:
Matsushita Electric Industrial Co., Ltd.