Patents Represented by Attorney, Agent or Law Firm Wenderoth, Lind & Ponnack, LLP
  • Patent number: 6383286
    Abstract: The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, and allows the doping of impurity atoms only to the core portion with the number of the impurity atoms being controlled.
    Type: Grant
    Filed: May 31, 2000
    Date of Patent: May 7, 2002
    Assignee: Japan as represented by Director General of National Research Institute for Metals
    Inventors: Nobuyuki Koguchi, Shiro Tsukamoto