Abstract: The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, and allows the doping of impurity atoms only to the core portion with the number of the impurity atoms being controlled.
Type:
Grant
Filed:
May 31, 2000
Date of Patent:
May 7, 2002
Assignee:
Japan as represented by Director General of National Research
Institute for Metals