Abstract: The invention is related to a MOS transistor and its fabrication method to reduce short-channel effects. Existing process has the problem of high complexity and high cost to reduce short-channel effects by using epitaxial technique to produce an elevated source and drain structure. In the invention, the MOS transistor, fabricated on a silicon substrate after an isolation module is finished, includes a gate stack, a gate sidewall spacer, and source and drain areas. The silicon substrate has a groove and the gate stack is formed in the groove.

Abstract: An integrated photovoltaic modular panel for a curtain wall glass is used to build integrated photovoltaic material. This invention provides standardized photovoltaic units, so that electrodes in a photovoltaic panel main body can be connected internally in parallel. The connector may be a metal piece of stamping or casting with a plug 1 and a socket 2 on two ends, a waist b in the middle, an inward concave straight strip 4 on both sides of the waist, an electrode plug-in socket 3 in the waist for firmly clamping solar cell, a plastic injection molding crust 5 for fixing and securing the connector, thus forming a module. It can be combined with different kinds of glass to form different kinds of photovoltaic curtain wall glass. The solar cell here may be an amorphous silicon solar cell.