Abstract: A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are produced, and, after removal of the masking layer and application of an auxiliary layer, the auxiliary layer and the fences are removed jointly except for a predetermined extent of the auxiliary layer. The present invention also relates to use of the method for producing spacers in a semiconductor structure.

Abstract: A contact between a polycrystalline silicon structure and a monocrystalline silicon region is produced by doping the silicon structure in amorphous or polycrystalline form and/or doping the monocrystalline silicon region with a dopant, in particular with oxygen, in such a concentration that a solubility limit is exceeded. In a subsequent heat treatment, dopant precipitations are formed which either control grain growth in the polycrystalline silicon layer or prevent a propagation of crystal faults into a substrate in the monocrystalline silicon region. Such a contact can be used, in particular, as a buried strap in a DRAM trench cell.

Abstract: A device for in-register positioning of a printing plate for mounting it on a plate cylinder of a printing press, includes at least two positioning pins engageable for in-register positioning exactly in recesses formed in a printing plate leading edge, and sensors for detecting the exact engagement and for transmitting a corresponding signal, at least one positioning pin and at least one recess on one side of the printing plate leading edge having noninterchangeable engagement positions in relation to at least one positioning pin and at least one recess on another side of the printing plate leading edge which is opposite to the one side thereof with respect to a center line of the printing plate.