Abstract: A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are produced, and, after removal of the masking layer and application of an auxiliary layer, the auxiliary layer and the fences are removed jointly except for a predetermined extent of the auxiliary layer. The present invention also relates to use of the method for producing spacers in a semiconductor structure.

Abstract: A micromechanical component placed on a substrate face includes at least one cell. A counter-electrode of a cell capacitor is placed under a cavity. The counter-electrode can be made from a first part of a lower conductive layer. An optionally circular membrane used as an electrode of the capacitor is placed above the cavity. The membrane is homogeneous, has a substantially uniform thickness, and can be part of an upper conductive layer preferably supported by a second part of the lower conductive layer. A caustic channel used to remove the sacrificial coating in order to form the cavity is laterally connected thereto. The channel has a vertical dimension equal to the vertical dimension of the cavity. A closure is adjacent to the channel and disposed outside the membrane. The component can be used as a pressure sensor, and can have several cells each adjacent to six other cells. A process for fabricating a micromechanical component is also provided.

Abstract: A method for back-etching of tungsten-coated substrate surfaces in the production of large-scale integrated circuits includes pressing a substrate against a cooled specimen holder during back-etching with a retaining ring being disposed on an edge of the substrate and only locally retaining the edge of the substrate with the retaining ring at retaining locations distributed over the circumference of the retaining ring. The retaining locations are backup-free relative to etching products liberated in the back-etching, causing the etching products to flow past the retaining locations and be purposefully deposited outside the substrate surface.

Abstract: A contact between a polycrystalline silicon structure and a monocrystalline silicon region is produced by doping the silicon structure in amorphous or polycrystalline form and/or doping the monocrystalline silicon region with a dopant, in particular with oxygen, in such a concentration that a solubility limit is exceeded. In a subsequent heat treatment, dopant precipitations are formed which either control grain growth in the polycrystalline silicon layer or prevent a propagation of crystal faults into a substrate in the monocrystalline silicon region. Such a contact can be used, in particular, as a buried strap in a DRAM trench cell.

Abstract: A device for in-register positioning of a printing plate for mounting it on a plate cylinder of a printing press, includes at least two positioning pins engageable for in-register positioning exactly in recesses formed in a printing plate leading edge, and sensors for detecting the exact engagement and for transmitting a corresponding signal, at least one positioning pin and at least one recess on one side of the printing plate leading edge having noninterchangeable engagement positions in relation to at least one positioning pin and at least one recess on another side of the printing plate leading edge which is opposite to the one side thereof with respect to a center line of the printing plate.

Abstract: Surface reactors for propellants operate with a copper/tin alloy and convert unsaturated hydrocarbons at low concentration into tin organics that are extremely highly ignitable and therefore act as ignition nuclei in the combustion of propellants. However, it loses some of its effect when used to form ignition nuclei in propellants. This is improved by melting the granular material in an alloy made from tin with at least one solution-activating alloying constituent, and then quenching it in an oxidation-preventing medium of the granular material so as to produce a particle size of up to 3 mm diameter and a large surface area. The novel granular material has a substantially larger surface area than granular material previously used for this purpose. Its efficiency is thus higher than previously possible.