Patents Represented by Attorney, Agent or Law Firm Whitham, Curtis & Whitham, P.C.
  • Low dielectric constant sidewall spacer using notch gate process
    Patent number: 6437377
    Abstract: A notched gate MOS device includes either an encapsulated low dielectric material or encapsulated air or a vacuum at the bottom of a notched gate. Due to the low dielectric constant at the site of interface between the gate and the source/drain, the capacitance loss at that site is significantly reduced.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: August 20, 2002
    Assignee: International Business Machines Corporation
    Inventors: Atul C. Ajmera, Ka Hing (Samuel) Fung, Victor Ku, Dominic J. Schepis