Patents Represented by Attorney, Agent or Law Firm Whyte Hirschboeck Dedek SC
  • Sputtered insulating layer for wordline stacks
    Patent number: 6617262
    Abstract: Insulating material is deposited onto a gate dielectric surface separating two wordline stacks, the method comprising the steps of: A. Forming at least two adjacent wordline stacks over a common gate dielectric, the stacks spaced apart from one another thereby forming an open surface on the gate dielectric between the stacks; and B. Depositing by sputtering the insulating material onto the open surface of the gate dielectric separating the two wordline stacks.
    Type: Grant
    Filed: March 18, 2002
    Date of Patent: September 9, 2003
    Assignee: Micron Technology, Inc.
    Inventor: Kevin L. Beaman