Abstract: A method and structure for forming a capacitor in a semiconductor device using a high dielectric constant, yttrium barium copper oxide layer as the capacitor dielectric layer. The process begins by providing a semiconductor structure having a conductive plug therein and having an opening, with sidewalls, over the conductive plug. The opening is shaped to accomodate a capacitor structure as is known in the art. A first conductive layer is formed on the conductive plug and on the sidewalls of the opening. A yttrium barium copper oxide layer is deposited on the first conductive layer using a sputtering process with a YBa2Cu3O7 target. The yttrium barium copper oxide layer can be annealed to control the oxygen content. For example, YBa2Cu3O6+X can be controlled at between X=0.2 and X=0.5.